Allicdata Part #: | SE10FDHM3/I-ND |
Manufacturer Part#: |
SE10FDHM3/I |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO219AB |
More Detail: | Diode Standard 200V 1A Surface Mount DO-219AB (SMF... |
DataSheet: | SE10FDHM3/I Datasheet/PDF |
Quantity: | 1000 |
30000 +: | $ 0.05055 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 780ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | 7.5pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | DO-219AB (SMF) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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The SE10FDHM3/I is an 800V Very Fast Recovery Diode, belonging to a series of Schottky rectifiers manufactured by Infineon Technologies. This diode is intended for use in energy efficient power conversion designs, such as those found in automotive and industrial applications. As a single diode, it comes in a small package, with a total height of only 2.5mm.
The SE10FDHM3/I consists of a base plate with a source, drain and gate structure, wherein the drain is connected to the source and the gate is connected to the source. The device can be made with n-type layer and p-type layers, and the diode has a reversed bias condition when the drain is more positive than the source. The current flows through the base layer, the source layer and then the drain layer. The forward bias will be the opposite, with the drain now more negative than the source. The SE10FDHM3/I’s construction is designed to be less dependent on temperature, and thus more reliable.
The application field of the SE10FDHM3/I is in Electronic Automotive System since it has been developed specifically for low power and linear applications. This diode is ideal for soft start applications, as it has excellent conduction and switching characteristics. Among other applications, the SE10FDHM3/I is also used in voltage control systems, electronic control systems and in regulating circuitry. The diode has a high surge forward current rating and low power loss, making it ideal for these types of applications.
The working principle of the SE10FDHM3/I is based on the effect of ohmic losses. During the rectification process, a specialized local electric field is created, which is further maintained by the high power density of the device. This electric field allows current to be transferred between layers, as electrons move between layers. By using ohmic losses, a low voltage drop is maintained and the current can be controlled. The reverse bias allows for steady-state control, which is important for voltage control.
The SE10FDHM3/I is a powerful, energy-efficient diode, capable of producing high-efficiency power conversion in applications such as automotive and industrial. With its excellent conduction and switching characteristics, the diode is ideal for soft start applications, voltage control systems and other regulating circuitry. The device is based on the effect of ohmic losses, allowing current to be transferred between layers and maintaining a low voltage drop.
The specific data is subject to PDF, and the above content is for reference
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