Allicdata Part #: | SE10PD-M3/84AGITR-ND |
Manufacturer Part#: |
SE10PD-M3/84A |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 200V 1A DO220AA |
More Detail: | Diode Standard 200V 1A Surface Mount DO-220AA (SMP... |
DataSheet: | SE10PD-M3/84A Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06490 |
6000 +: | $ 0.06129 |
15000 +: | $ 0.05588 |
30000 +: | $ 0.05228 |
Series: | eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 200V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.05V @ 1A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 780ns |
Current - Reverse Leakage @ Vr: | 5µA @ 200V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-220AA |
Supplier Device Package: | DO-220AA (SMP) |
Operating Temperature - Junction: | -55°C ~ 175°C |
Base Part Number: | SE10PD |
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A SE10PD-M3/84A is a single-phase, soft recovery, ultrafast rectifier diode. This type of diode is mainly used for power rectification, as well as for fast-charging and recovery in switching applications. It offers a very low forward voltage drop and can reach high junction temperatures without causing destruction. This article will focus on the application field and working principle of the SE10PD-M3/84A diode.
The SE10PD-M3/84A is used mainly for power rectification. This type of diode offers a very fast switching time, due to its soft-recovery feature. This is because the time required to charge or discharge its internal capacities is significantly shorter than that of conventional rectifier diodes. In addition, the diode is capable of reaching high junction temperatures without causing destruction, which makes it suitable for applications requiring high switching frequencies.
The working principle of the SE10PD-M3/84A rectifier diode is based on the p-n junction. It consists of a p-type semiconductor layer and an n-type semiconductor layer, which are connected together. When a voltage is applied across the p-n junction, it forms a potential barrier, and current begins to flow. The current is then driven through the p-n junction by applying a forward bias voltage, which causes the electrons to move from the n-type material to the p-type material, thus creating a current flow.
As the current begins to flow, the diode becomes forward-biased and it allows current to pass through it. This current flow is then limited by the reverse voltage of the diode, which prevents the device from being damaged due to overvoltage. The SE10PD-M3/84A is also able to offer excellent stability, because it has a very low forward voltage drop.
The SE10PD-M3/84A diode offers many advantages for switching applications. It has an ultrafast switching time, due to its soft-recovery feature, and it is also capable of withstanding high junction temperatures without suffering from destruction. In addition, it has a low forward voltage drop, which allows it to offer excellent stability. For these reasons, the SE10PD-M3/84A is a highly reliable and efficient rectifier diode which can be used in many different power rectification and switching applications.
The specific data is subject to PDF, and the above content is for reference
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