Allicdata Part #: | SE100PWJHM3/I-ND |
Manufacturer Part#: |
SE100PWJHM3/I |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 10A SLIMDPAK |
More Detail: | Diode Standard 600V 10A Surface Mount SlimDPAK |
DataSheet: | SE100PWJHM3/I Datasheet/PDF |
Quantity: | 1000 |
4500 +: | $ 0.19279 |
Series: | Automotive, AEC-Q101, eSMP® |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 10A |
Voltage - Forward (Vf) (Max) @ If: | 1.14V @ 10A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 2.6µs |
Current - Reverse Leakage @ Vr: | 20µA @ 600V |
Capacitance @ Vr, F: | 78pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | SlimDPAK |
Operating Temperature - Junction: | -55°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SE100PWJHM3/I is a single-die, single-phase bridge rectifier with a maximum efficiency of 97%. It is ideal for use in a wide range of applications, including consumer electronics, automotive, power supplies, motor controls, and lighting. This device has a maximum repetitive peak reverse voltage of 100V and a maximum forward current of 3A. The SE100PWJHM3/I features low power loss, high efficiency, low temperature dependence, and is capable of very fast switching.
The working principle of the SE100PWJHM3/I is based on the four-layer silicon technology. The device is constructed as four layers - an anode, cathode, and two layers of p-type and n-type diodes. When power is applied, the diode bridge is activated, causing electrons to flow in one direction. The forward diode is forward biased, and the reverse diode is reverse biased. This allows current to flow through the device in one direction only, from the anode to the cathode.
The application field of the SE100PWJHM3/I is very wide and its use is suitable for use in consumer electronics, automotive, power supplies, motor controls, and lighting applications. In consumer electronics, its low power loss, high efficiency, and low temperature coefficient make it ideal for use in power supplies for electric appliances, televisions, computers, and game consoles. It is also suitable for motor controls in both DC and AC motors, such as in automotive electric power steering and fans, as well as in various lighting applications.
The SE100PWJHM3/I has a maximum repetitive peak reverse voltage of 100V, a maximum forward current of 3A, a maximum reverse current of 150 mA, and a maximum temperature rise of 105°C. It operates at a junction temperature range of –20 to +125°C, a voltage of 5 to 400V, and a peak forward surge current of 8.3A at 30°C.
The SE100PWJHM3/I is an ideal device for a wide range of applications and its four-layer silicon construction provides low power loss, high efficiency, low temperature dependence, and extremely fast switching. In addition, its wide voltage range makes it suitable for use in a variety of devices and applications making it an all-around versatile component.
The specific data is subject to PDF, and the above content is for reference
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