SE10FJHM3/I

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The SE10FJHM3/I is a silicon epitaxial planar diode. It is suitable for use in general-purpose rectification and free-wheeling applications; it also suitable for voltage clamping and VHF oscillator. It is also designed for switching in various types of circuits, such as high-speed switching, low and high-voltage applications, temperature sensor circuits, low-noise and high-precision circuits.

Appearance and Specification

The SE10FJHM3/I is a two-terminal, reverse conducting, p-n junction diode in a JEDEC TO-92 package. The package is a through-hole for ease of manufacturing. Its dimensions are 0.55mmx 1.05mm x 0.4mm (L x W x T). Its pin out is shown in the following picture show above.

The SE10FJHM3/I is rated at 1.0A, 1.5A, and 2.5A with a maximum current rating of 3A. It can withstand a maximum reverse voltage of 100V and a maximum forward voltage of 1.0V. It operates over a junction temperature range of -60°C to 150°C and a storage temperature range of -60°C to 150°C.

Application Field and Working Principle

The SE10FJHM3/I can be used in a variety of applications, including rectification, clamping, and switching. It is most commonly used for rectification where it can be used to convert AC power to DC power, such as in power supplies or voltage regulators. It can also be used for clamping, where it limits the differential between two nodes by conducting current when the voltage between the nodes reaches a certain level.

The SE10FJHM3/I is a silicon diode and works as a two-terminal, reverse-conducting p-n junction diode. When used for rectification, current can only flow in one direction. It consists of a positive (p-) side and a negative (n-) side. When a positive bias is applied to the junction, it will conduct, allowing current to flow across the diode and establishing a forward bias. When a negative bias is applied to the junction, it will reverse the current flow and establish a reverse bias.

The SE10FJHM3/I can also be used for switching. When used as a switch, it turns on when a positive bias is applied and turns off when a negative bias is applied. Due to its low capacitance, it has minimal current disruption during rapid voltage transitions, making it suitable for high-speed switching applications.

Advantages

The SE10FJHM3/I is a reliable and robust diode which is suitable for a variety of applications. Due to its low voltage drop, it is considered efficient and can yield higher output voltages. Its flat reverse current characteristics result in low switching noise. Additionally, its low capacitance makes it ideal for switching applications with rapid voltage transitions. Lastly, its high reverse voltage breakdown strength makes it suitable for a variety of applications.

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