SE10PGHM3/85A Allicdata Electronics
Allicdata Part #:

SE10PGHM3/85A-ND

Manufacturer Part#:

SE10PGHM3/85A

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 400V 1A DO220AA
More Detail: Diode Standard 400V 1A Surface Mount DO-220AA (SMP...
DataSheet: SE10PGHM3/85A datasheetSE10PGHM3/85A Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05947
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: eSMP®
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: SE10PG
Description

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The SE10PGHM3/85A is a single-level rectifier diode that is used primarily in industries involving the production of electronic components. It is not only used for rectification, but also for limiting voltage and current, as well as the protection of the circuit itself. This diode comes in an array of sizes and package styles making it an ideal choice for a wide range of applications.

The SE10PGHM3/85A is an axial-case package with a voltage rating of 85 volts, a maximum current of 3 amperes, and a maximum peak pulsed current of 8 amperes. It is also capable of blocking a reverse voltage of up to 85 volts. It is composed of a UL 94V-0 flame-rating polyamide plastic body and a lead- free solderable per MIL-STD-19500. This diode has a maximum reverse recovery time of around 15ns and a maximum forward surge current of 8 amperes.

As far as applications are concerned, the SE10PGHM3/85A is typically used in power supplies, voltage regulators, high-volume rectification applications, high-reliability automotive applications, and current-limiting circuits. This diode is also often used in the production of solar cells, consumer electronics, lighting, and automotive ignition systems. It is also highly suitable for low power rectification circuits due to its high frequency operation.

The SE10PGHM3/85A is a single-level rectifier diode which works by converting AC power into DC power. It is composed of two outer terminals, a positive and a negative, and an inner terminal which bridges the gap between the two outer terminals. When a potential difference is applied across the two outer terminals, the diode will allow current to flow in one direction only. This means that it will only permit current to flow through the diode when a positive potential is applied across the positive terminal and a negative potential across the negative terminal.

When a positive potential is applied to the positive terminal and a negative potential to the negative terminal, the SE10PGHM3/85A will act as a rectifier, allowing current to flow in one direction. When this happens, the negative terminal is effectively reversed biased, causing it to become the reverse terminal. This means that any current flowing into the negative terminal will not be able to make its way forward, but rather will be absorbed by the diode and converted into heat.

When a voltage is applied to the diode in the reverse direction, the SE10PGHM3/85A will act as a blocker, blocking the flow of any current. This means that the diode will effectively limit the amount of current that can pass through it in the reverse direction. This is extremely useful for protecting circuits from being damaged by excessive current.

The SE10PGHM3/85A is a highly efficient single-level rectifier diode used in a variety of applications. It is used primarily in the production of electronic components, power supplies, voltage regulators, current-limiting circuits, automotive ignition systems and solar cells. In addition to rectification, it is also useful for limiting the amount of current passing through the diode and protecting circuits from damage.

The specific data is subject to PDF, and the above content is for reference

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