
Allicdata Part #: | SE10DGHM3/IGITR-ND |
Manufacturer Part#: |
SE10DGHM3/I |
Price: | $ 0.26 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 400V 3A TO263AC |
More Detail: | Diode Standard 400V 3A Surface Mount TO-263AC (SMP... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.23020 |
6000 +: | $ 0.21433 |
10000 +: | $ 0.21168 |
Series: | Automotive, AEC-Q101, eSMP® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 400V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.15V @ 10A |
Speed: | Standard Recovery >500ns, > 200mA (Io) |
Reverse Recovery Time (trr): | 3µs |
Current - Reverse Leakage @ Vr: | 15µA @ 400V |
Capacitance @ Vr, F: | 67pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab) Variant |
Supplier Device Package: | TO-263AC (SMPD) |
Operating Temperature - Junction: | -55°C ~ 175°C |
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Diodes are used for a variety of applications, ranging from power supplies to rectifier circuits. The SE10DGHM3/I is a single rectifier diode that is ideally suited for a variety of applications. This article will discuss the application field and working principle of this diode.
The SE10DGHM3/I is a single rectifier diode designed for use in power supplies. It is designed to be used in high voltage rectifier circuits, such as power converters, DC/DC converters, AC/DC converters, and DC/AC inverters. In these types of circuits, the SE10DGHM3/I acts as a rectifier and the diode is used to convert the AC current into DC current. The diode is also used to prevent the reverse current from flowing through the circuit.
The working principle of the SE10DGHM3/I is very simple. When a voltage is applied to the anode of the diode, a current will flow from the anode to the cathode. This current is known as the forward current. When the voltage is removed, the reverse current will flow from the cathode to the anode, and this is known as the reverse current. The SE10DGHM3/I has a built-in guard ring that prevents the reverse current from flowing through the diode. This guard ring also prevents the diode from being damaged by high voltages.
The SE10DGHM3/I is made up of an anode and a cathode, and these components are connected by aninsulated substrate. The anode and cathode of the diode are made from silicon, a semiconductor material that is suitable for use in high voltage applications. The substrate acts as an insulation layer, and it also helps to protect the diode from electrical and mechanical stresses.
The SE10DGHM3/I is designed to operate in high temperature and high voltage environments. It is often used in applications such as medical equipment, automobiles, home appliances, and telecommunications equipment. The diode has a good reliability, and it can be used in harsh environments such as saline swamps and high-vibration environments. The diode also has a high breakdown voltage and an attractive price.
The SE10DGHM3/I is a robust and reliable single rectifier diode and it is suitable for a variety of applications. It can be used in high voltage, high temperature, and high vibration environments. The diode is reliable, has a good breakdown voltage, and is available at an attractive price. The guard ring protects the diode from high voltages, and it ensures that the diode operates in a safe and reliable manner.
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