| Allicdata Part #: | SFT12GHA1G-ND |
| Manufacturer Part#: |
SFT12GHA1G |
| Price: | $ 0.05 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | DIODE GEN PURP 100V 1A TS-1 |
| More Detail: | Diode Standard 100V 1A Through Hole TS-1 |
| DataSheet: | SFT12GHA1G Datasheet/PDF |
| Quantity: | 1000 |
| 12000 +: | $ 0.04234 |
| Series: | Automotive, AEC-Q101 |
| Packaging: | Tape & Box (TB) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 1A |
| Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
| Speed: | Fast Recovery = 200mA (Io) |
| Reverse Recovery Time (trr): | 35ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 100V |
| Capacitance @ Vr, F: | 20pF @ 4V, 1MHz |
| Mounting Type: | Through Hole |
| Package / Case: | T-18, Axial |
| Supplier Device Package: | TS-1 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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SFT12GHA1G Application Field and Working Principle
The SFT12GHA1G rectifier diode is a single-phase, low forward voltage diode. It has low leakage current, low voltage drop, and high surge capability. It is designed to operate in high-frequency, high-power applications. The SFT12GHA1G is typically used in power supplies, solar energy systems, inverters, automobile, UPS, and other power electronics, where high efficiency and long life are important.
The SFT12GHA1G is designed to protect the circuits from excessive currents, such as those caused by heavy loads, short circuits, and overvoltage. The SFT12GHA1G rectifier diode is among the most popular rectifier diodes, as it operates in a wide range of temperature conditions. It can also be used in multiple driving circuits for more efficient protection and more reliable performance.
The SFT12GHA1G is constructed with a one-piece metal case and a single-phase, glass-encapsulated PN junction. It operates over a wide temperature range from -55 to +150 degrees Celsius. Its junction capacitance is very low over a wide range of current densities, allowing high-speed switching. The low-capacitance junction also allows the SFT12GHA1G to operate at a high frequency, allowing for a greater power efficiency.
The working principle of the SFT12GHA1G is quite simple. As current flows through the PN junction, the anode should be more positive than the cathode. The anode current is known as the forward current and is supplied by a power source. When a reverse voltage is applied across the PN junction, the diode blocks the current and the diode becomes a low impedance.
In order to reverse the voltage, a higher voltage is needed and this higher voltage should exceed a certain threshold, or breakdown voltage. When the breakdown voltage is exceeded, a large current can flow, resulting in breakdown and damage to the circuit. The SFT12GHA1G is designed to provide a low leakage theory, low voltage drop, and high surge capability, while protecting the circuits from reverse voltage and excessive current.
The SFT12GHA1G rectifier diode provides superior heat dissipation, high reliability, and long life for high power, high frequency applications like power supplies, solar energy systems, inverters, and other power electronics. Its low capacitance junction allows fast switching and high power efficiency, while its low leakage current, low voltage drop, and high surge capability make it ideal for protecting the circuits from reverse voltage and excessive current.
The specific data is subject to PDF, and the above content is for reference
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SFT12GHA1G Datasheet/PDF