SFT1350-TL-H

The SFT1350-TL-H is a single, N-channel Enhancement Mode MOSFET (metal oxide semiconductor (MOS) field effect transistor) intended for switching applications. It is manufactured using low voltage technology and is particularly suitable for high-speed switching applications. This article provides an overview of the SFT1350-TL-H and will describe in detail its application field, working principle and configuration.

Features

The SFT1350-TL-H has a dynamic drain-source on-resistance of typically 0.4 Ohms and a breakdown voltage of 80V. It is designed specifically for switching applications and has been designed to switch rapidly and with high efficiency. It is available in a wide range of packages, from a single in line (SIL) package to a plastic small outline transistor (PSOT) package.

Application Field

The SFT1350-TL-H is suitable for a wide range of applications, including power management, switching power supplies and drives, variable frequency drives, AC/DC converters and phase control applications. Additionally, it is used in applications such as high-efficiency lamp driving, LED drivers, DC motors and other high-reliability circuits. It is ideal for use in high-power and high-density graphics cards,due to its low dynamic drain-source resistance, high efficiency and low noise.

Working Principle

The SFT1350-TL-H is an N-Channel Enhancement Mode MOSFET that operates by the principle of enhancing its channel to control the flow of current. The voltage between the gate and the source terminals tends to be positive in the ‘on’ state. The voltage generates a high-concentration of electrons at the positive gate, which creates a conducting channel between source and drain terminals. The internal circuit of a MOSFET is essentially insulated from the active channel and therefore renders it immune to external influences such as temperature and current level.

Configuration

The SFT1350-TL-H must be configured according to the application requirements. A gate-gate configuration is typically used for DC power applications; whereas, a gate-drain configuration is used for AC switching applications. In the gate-gate configuration, the two gate terminals must be connected together, and the source-drain terminals are to be connected to the load contacts. In the gate-drain configuration, the gate and drain contacts must be connected together, while the source contacts is connected to the load contact.

Conclusion

The SFT1350-TL-H is an N-Channel Enhancement Mode MOSFET designed for a variety of switching applications. It features a low dynamic drain-source resistance, high efficiency and low noise, making it an ideal choice for high-power and high-density graphics cards. Further, the SFT1350-TL-H must be configured according to the application requirements, as either a gate-gate or gate-drain configuration. Aside from being used for switching applications, it is also suitable for power management, switching power supplies and drives, AC/DC converters and phase control applications.