SFT1443-TL-H Discrete Semiconductor Products |
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Allicdata Part #: | SFT1443-TL-HOSTR-ND |
Manufacturer Part#: |
SFT1443-TL-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 100V 9A TP-FA |
More Detail: | N-Channel 100V 9A (Ta) 1W (Ta), 19W (Tc) Surface M... |
DataSheet: | SFT1443-TL-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | DPAK/TP-FA |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 19W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 225 mOhm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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SFT1443-TL-H belongs to one of the most common semiconductor discrete devices — transistor. It is a single MOSFET device. In electrical engineering, this device is often used as an amplifier with features like high efficiency, high current control, and high voltage switching.
This particular SFT1443-TL-H MOSFET device is a N-Channel Power MOSFET with a low on-resistance RDS(on) max and a low gate threshold voltage. It is designed for a wide variety of applications such as solar inverter, battery charger, dc/dc converters, and or pump and motor control.
In general, the SFT1443-TL-H device has several key parameters for application, such as drain-source breakdown voltage, maximum drain current, drain-source on-resistance, maximum power dissipation, body diode reverse voltage, and so forth.
The drain-source breakdown voltage of SFT1443-TL-H is usually 700V, which is higher than the regular 500V device. This parameter defines the maximum voltage between drain and source with the gate open. The maximum drain current is typically 10A with a typical value of 8A. This parameter determines the highest current that can be transported between drain and source. In addition, the device has the maximum power dissipation of 600W, which is within the acceptable range for many applications.
When it comes to working principle, this single MOSFET device works in a rather simple manner. The gate charge of the device acts as an on-off switch and works to control the flow of current from drain to source. When the gate charge is high, the device is “on” and current will flow from the drain to the source. When the gate charge is low, the device is “off” and no current will flow.
Furthermore, the device features a small active area which works to limit the gate charge. This minimizes the “on” resistance of the device and increases its efficiency. The total gate charge of the SFT1443-TL-H is typically 0.11µC, which is quite low compared to other similar MOSFET devices. This makes it a very efficient device and perfect for many application fields.
Overall, SFT1443-TL-H is a single MOSFET device with high efficiency and high current control. Its high voltage switching and low gate threshold voltage make this device suitable for a wide range of applications from solar inverters to battery chargers and even pumps and motor controllers. The device has a low on-resistance RDS(on) and well-controlled gate charge which ensures high efficiency.
The specific data is subject to PDF, and the above content is for reference
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