| Allicdata Part #: | SFT1443-W-ND |
| Manufacturer Part#: |
SFT1443-W |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 100V 9A IPAK |
| More Detail: | N-Channel 100V 9A (Ta) 1W (Ta), 19W (Tc) Through H... |
| DataSheet: | SFT1443-W Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | IPAK/TP |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta), 19W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 20V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.8nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 225 mOhm @ 3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 9A (Ta) |
| Drain to Source Voltage (Vdss): | 100V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Transistors - FETs, MOSFETs - Single
SFT1443-W Application Field and Working Principle
SFT1443-W is a N-channel enhancement type MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for switching and amplification developed by SFT Electronics. It is a type of semiconductor device used to control current flow between two terminals by varying the input voltage. This device is widely used in many applications such as powering motors and switches, signal transmission, audio amplifiers, and power conversion. One of the advantages of SFT1443-W is its ultra low on-state resistance which is about 1.3 mΩ.
The working principle of this device can be described as follows. When a positive voltage is applied to the gate of the MOSFET, it will result in the generation of an electric field between the gate and source which can induce a current flow between source and drain. This electric field created by the voltage applied to the gate will attract electrons from the source region and force them to flow across the channel. These electrons will then flow through the drain and provide the working currents of the device.
SFT1443-W is suitable for use in many applications where low power consumption is of importance such as in motor drivers, light dimmers, and audio amplifiers. It is also suitable for use in power converters and switches which require fast switching speeds and high on-state current ratings.
In summary, SFT1443-W is an N-channel MOSFET with ultra low on-state resistance and fast switching speeds. It is suitable for many applications such as motor drivers, light dimmers, audio amplifiers, and power converters. Its working principle is based on the generation of an electric field by the gate voltage which can induce a current flow between source and drain.
The specific data is subject to PDF, and the above content is for reference
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| SFT14G A0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
| SFT1443-W | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 100V 9A IPAKN... |
| SFT11GHR0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
| SFT14GHA1G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 200V 1A TS... |
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| SFT13GHA0G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 150V 1A TS... |
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| SFT11G R0G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 50V 1A TS-... |
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SFT1443-W Datasheet/PDF