SFT18GHR0G Allicdata Electronics
Allicdata Part #:

SFT18GHR0G-ND

Manufacturer Part#:

SFT18GHR0G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 600V 1A TS-1
More Detail: Diode Standard 600V 1A Through Hole TS-1
DataSheet: SFT18GHR0G datasheetSFT18GHR0G Datasheet/PDF
Quantity: 1000
10000 +: $ 0.04850
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Introduction

The SFT18GHR0G is a single-phase ultra-fast, ultra-soft recovery series super-junction MOSFET, designed to deliver maximum efficiency to energy-sensitive residential and commercial applications while optimizing system heat dissipation capability. The SFT18GHR0G is also optimized for low gate charge and low power loss in high frequency switch-mode power supplies (SMPS).

Application Field and Working Principle

The SFT18GHR0G is unique in its ability to deliver maximum efficiency to energy-sensitive residential and commercial applications. It is designed to be used in high-power AC-DC converters, input rectifiers, DC-DC converters, and audio amplifiers. The device is highly power efficient due to its ultra-soft recovery characteristics. The SFT18GHR0G\'s ultra-soft recovery property, along with its wide operating temperature range, ensures maximum efficiency in highly dynamic load applications, such as power factor correction circuits and grid-tied power supplies. Its ultra-fast speed also reduces switching noise in high-frequency switching applications. In terms of its working principle, the device utilizes a super-junction (SR) MOSFET structure. This structure uses a vertical N-channel MOSFET array to fill the gap between the source and the drain, which allows for very low conduction losses and fast switching, resulting in better system efficiency. The SFT18GHR0G also utilizes a low gate charge design for improved efficiency in SMPS applications. Its ultra-fast switching and low gate charge reduces iR clamp losses and conduction losses in the controller, resulting in lower total power losses. In addition, the device is Pb-free and RoHS compliant. It also has an immunity to latch-up and ESD, making it an ideal choice for consumer and industrial applications.

Conclusion

The SFT18GHR0G is a single-phase, ultra-fast, ultra-soft recovery series super-junction MOSFET that is optimized for optimized power efficiency and low gate charge in high frequency switch-mode power supplies. It is designed to be used in high-power AC-DC converters, input rectifiers, DC-DC converters, and audio amplifiers, and is protected against latch-up and ESD. Its super-junction structure and ultra-fast switching reduce conduction losses, resulting in maximum efficiency in highly dynamic load applications.

The specific data is subject to PDF, and the above content is for reference

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