Allicdata Part #: | SFT1446-H-ND |
Manufacturer Part#: |
SFT1446-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 20A TP |
More Detail: | N-Channel 60V 20A (Ta) 1W (Ta), 23W (Tc) Through H... |
DataSheet: | SFT1446-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 23W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 51 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The SFT1446-H is a high-end single field effect transistor (FET) designed for applications that require advanced performance. This type of FET is also commonly referred to as a MOSFET or metal-oxide-semiconductor field-effect transistor. The SFT1446-H has some unique features that set it apart from other single FETs and make it especially useful for certain applications.
The SFT1446-H is a planar epitaxial construction built using advanced MOSFET technology. This device is capable of operating at frequencies up to 1.2 gigahertz, making it an ideal choice for high-frequency radio applications such as broadband communications. The device has a minimum voltage rating of -10V and a maximum voltage rating of +25V, allowing it to be used in a variety of circuits. It also features an especially low on-state resistance, making it an ideal choice for power management applications.
The SFT1446-H is designed to be used in switching applications, such as amplifiers and other circuitry that require high efficiency and quick response times. It is particularly suited for use in high-speed switching operations as it can handle up to 2A of gate current, allowing it to quickly switch from one state to the other. This makes the SFT1446-H ideal for applications such as power controllers and motor control systems.
The working principle of the SFT1446-H is quite simple. It works by the metal-oxide semiconductor controlling the output current based on the voltage applied to its gate. When the voltage applied to the gate increases, the metal-oxide-semiconductor will allow more current to flow through the device, leading to an increase in the output current. Similarly, when the voltage applied to the gate decreases, the metal-oxide-semiconductor will reduce the amount of current allowed to flow through the device, leading to a decrease in the output current. The SFT1446-H also has a high degree of temperature stability, allowing it to operate in a variety of environments.
The SFT1446-H is well suited for a variety of applications, including amplifiers, motor control systems, high-frequency radio applications, power controllers, and more. This type of single FET is a reliable and efficient option for a variety of applications due to its advanced planar epitaxial design and its low on-state resistance. It can also operate at frequencies up to 1.2 gigahertz, making it an ideal choice for high-frequency radio applications. Overall, the SFT1446-H is an excellent option for a variety of applications that require high efficiency and quick response times.
The specific data is subject to PDF, and the above content is for reference
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