SFT1446-H Allicdata Electronics
Allicdata Part #:

SFT1446-H-ND

Manufacturer Part#:

SFT1446-H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 60V 20A TP
More Detail: N-Channel 60V 20A (Ta) 1W (Ta), 23W (Tc) Through H...
DataSheet: SFT1446-H datasheetSFT1446-H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1W (Ta), 23W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

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The SFT1446-H is a high-end single field effect transistor (FET) designed for applications that require advanced performance. This type of FET is also commonly referred to as a MOSFET or metal-oxide-semiconductor field-effect transistor. The SFT1446-H has some unique features that set it apart from other single FETs and make it especially useful for certain applications.

The SFT1446-H is a planar epitaxial construction built using advanced MOSFET technology. This device is capable of operating at frequencies up to 1.2 gigahertz, making it an ideal choice for high-frequency radio applications such as broadband communications. The device has a minimum voltage rating of -10V and a maximum voltage rating of +25V, allowing it to be used in a variety of circuits. It also features an especially low on-state resistance, making it an ideal choice for power management applications.

The SFT1446-H is designed to be used in switching applications, such as amplifiers and other circuitry that require high efficiency and quick response times. It is particularly suited for use in high-speed switching operations as it can handle up to 2A of gate current, allowing it to quickly switch from one state to the other. This makes the SFT1446-H ideal for applications such as power controllers and motor control systems.

The working principle of the SFT1446-H is quite simple. It works by the metal-oxide semiconductor controlling the output current based on the voltage applied to its gate. When the voltage applied to the gate increases, the metal-oxide-semiconductor will allow more current to flow through the device, leading to an increase in the output current. Similarly, when the voltage applied to the gate decreases, the metal-oxide-semiconductor will reduce the amount of current allowed to flow through the device, leading to a decrease in the output current. The SFT1446-H also has a high degree of temperature stability, allowing it to operate in a variety of environments.

The SFT1446-H is well suited for a variety of applications, including amplifiers, motor control systems, high-frequency radio applications, power controllers, and more. This type of single FET is a reliable and efficient option for a variety of applications due to its advanced planar epitaxial design and its low on-state resistance. It can also operate at frequencies up to 1.2 gigahertz, making it an ideal choice for high-frequency radio applications. Overall, the SFT1446-H is an excellent option for a variety of applications that require high efficiency and quick response times.

The specific data is subject to PDF, and the above content is for reference

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