Allicdata Part #: | SFT1345-H-ND |
Manufacturer Part#: |
SFT1345-H |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET P-CH 100V 11A TP |
More Detail: | P-Channel 100V 11A (Ta) 1W (Ta), 35W (Tc) Through ... |
DataSheet: | SFT1345-H Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
Supplier Device Package: | TP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta), 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1020pF @ 20V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 275 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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Introduction to SFT1345-H
SFT1345-H is a power MOSFET developed with the latest VDMOS process, suitable for use in a variety of automotive, commercial, and industrial applications. It is the latest power MOSFET from SFT and offers a low RDS(on) to reduce power consumption, high blocking voltage to help protect against overvoltage, and fast switching speed to provide higher efficiency in more compact solutions.SFT1345-H is designed for use with 12V supply voltages and offers a maximum drain-source voltage of up to 700V for improved protection against overvoltage. The maximum drain current is 17A, and the on-state resistance is 7mΩ, making it a good choice for systems that require high current while remaining efficient.Application Fields of the SFT1345-H
The SFT1345-H is suitable for a wide range of applications, including automotive, commercial, and industrial. It is commonly used in power switching circuits, such as car audio amplifiers, motor drives, automotive control systems, and PC power supplies. It is also used in power conversion applications, such as uninterruptible power supplies and solar inverters, thanks to its fast switching speed and low on-state resistance.Working Principle of the SFT1345-H
The SFT1345-H is a power MOSFET based on the VDMOS process. It consists of a monolithic structure with an active layer made of metal oxide semiconductor (MOS) and an insulated gate electrode. The gate electrode is insulated from the body of the MOS by a layer of gate oxide, and a gate bias voltage is applied to the gate in order to control the current flowing through the device.When the gate bias voltage is applied, it creates a vertical electric field between the gate oxide and the active layer, causing the conductivity of the active layer to increase or decrease depending on the type of MOSFET. In the case of the SFT1345-H, the gate voltage controls the current flowing between the drain and source terminals. It also offers low on-state resistance, meaning that it can switch power faster than other types of MOSFETs. Conclusion
In conclusion, the SFT1345-H is a power MOSFET developed with the latest VDMOS process, suitable for use in automotive, commercial, and industrial applications. It has a maximum drain-source voltage of up to 700V and a maximum drain current of 17A. It is designed for use with 12V supply voltages and offers low on-state resistance and fast switching rates, making it a good choice for systems that require high current while remaining efficient.
The specific data is subject to PDF, and the above content is for reference
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