Allicdata Part #: | SFT1431-W-ND |
Manufacturer Part#: |
SFT1431-W |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 35V 11A TP |
More Detail: | N-Channel 35V 11A (Ta) 1W (Ta), 15W (Tc) Through H... |
DataSheet: | SFT1431-W Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 0.28744 |
Series: | -- |
Packaging: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 35V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 5.5A, 10V |
Vgs(th) (Max) @ Id: | 2.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.3nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 960pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta), 15W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | IPAK/TP |
Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
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The SFT1431-W is a special field-effect transistor (FET) designed for use in high-frequency applications. It is a single-pass insulated gate FET (IGFET) with a low-voltage operation and low-capacitance drain-source capacitance. The SFT1431-W is otherwise known as a metal-oxide-semiconductor FET (MOSFET).
The working principle of an SFT1431-W FET is based on the fact that the drain and source (gate) terminals are products of the channel length and width (L and W). This means that a change in L or W will result in a change in current flow. Therefore, by changing the L and W values, a user can control the current flow through the FET which is then used to control power.
The SFT1431-W FET is used in a wide variety of applications. Generally, the main purpose of using a FET is to connect and disconnect the load from its power source. This is achieved by changing the L and W values of the FET. In high-frequency applications, the FET can be used to form high-speed switches capable of quick switching. This is ideal for switching DC loads with high frequency and for rapidly changing the internal resistance of an electronic device. In addition, FETs have an extremely low input impedance and are used in voltage control circuits. They are also used as level converters, amplifiers and waveform generators.
In addition to its high-frequency switching application, the SFT1431-W can be used in a variety of other applications.For example, it can be used in low-noise amplifier circuits, power conditioning circuits and high-speed analog-to-digital converter circuits. They can also be used in current-sensing circuits as well as power-sensing circuits. Furthermore, they can be used in differential amplifier applications as well as high-impedance detectors.
The SFT1431-W IGFET features an insulated gate with a relatively low voltage operation. This provides increased protection against unwanted electrical noise. The device also features a low-capacitance drain-source capacitance which makes it ideal for high-frequency switching applications. The SFT1431-W is also capable of handling DC voltage up to 24V, making it suitable for a wide range of electronic applications. Additionally, it has a high breakdown voltage that allows for higher switching speeds.
The SFT1431-W is a single-polarity FET that can be used in a variety of applications including high-speed switching, voltage control, current sensing, power conditioning, and amplifying. It is a low-voltage MOSFET with a low-capacitance drain-source capacitance. This ensures increased protection against electrical noise while also providing a high breakdown voltage. Making it an ideal choice for a wide range of electronic applications.
The specific data is subject to PDF, and the above content is for reference
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