SI1033X-T1-E3 Allicdata Electronics

SI1033X-T1-E3 Discrete Semiconductor Products

Allicdata Part #:

SI1033X-T1-E3TR-ND

Manufacturer Part#:

SI1033X-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 20V 0.145A SOT563F
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 145mA 250mW Su...
DataSheet: SI1033X-T1-E3 datasheetSI1033X-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Base Part Number: SI1033
Supplier Device Package: SC-89-6
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 250mW
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 145mA
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI1033X-T1-E3 is a small-signal MOSFET array integrated circuit (IC)—a component that combines two or more transistors or other functional components into a single compact package. It is designed for a variety of applications, such as power supply sequencing, switching, and motor control. It is commonly used for controlling power in consumer electronics as well as industrial applications.

As a MOSFET, SI1033X-T1-E3 is a Field Effect Transistor (FET) which uses electric fields to control the current flow through a semiconductor between two electrodes, in this case the source (S) and drain (D). These electrodes are insulated from one another by an oxide layer, allowing the voltage applied to the Gate (G) electrode to dictate the flow of current between S and D. Due to its relatively low power usage, the SI1033X-T1-E3 is ideal for low-voltage, low-power applications.

The SI1033X-T1-E3 offers a wide range of features and applications, including high temperature operation, motor control, and current sensing. The SI1033X-T1-E3 is typically used in motor applications as it can control current flow through the motor as well as provide precise speed control. It is also well-suited for power supply sequencing, as it is optimized for very fast switching. Additionally, its high temperature range allows for its use in various environments. It is commonly used to switch relatively high voltages, from 6V-150V, and can handle currents up to 15A.

One of the primary benefits of the SI1033X-T1-E3 is its ability to switch quickly between power-on and power-off states, making it ideal for a variety of switching applications. This fast switching also enables it to work with both DC and AC voltages, providing a more reliable power supply with improved performance.

The SI1033X-T1-E3 is also very reliable, with a maximum operating temperature of up to 175°C, allowing it to operate in higher temperatures while maintaining a tight tolerance band. This improved temperature range also makes it suitable for operations under extreme environmental conditions, such as in automotive applications.

In addition to its reliable operation in extreme temperatures, the SI1033X-T1-E3 is also very versatile. It can be used in a wide range of current sensing, switching, and power sequencing applications, as well as in motor control applications. Its high current handling capabilities make it an ideal choice for controlling motors, as it can accurately control its speed and current flow.

Overall, the SI1033X-T1-E3 MOSFET array is a small integrated circuit with a wide range of applications. Its fast switching and high-temperature capabilities make it suitable for a wide range of consumer and industrial applications, from power supply sequencing to motor control. With the ability to handle relatively high voltages, the SI1033X-T1-E3 is an ideal choice for low-power, low-voltage applications.

The specific data is subject to PDF, and the above content is for reference

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