SI1013R-T1-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI1013R-T1-E3 is a single P-Channel metal-oxide-semiconductor field-effect transistor (MOSFET) that is designed to provide efficient, cost-effective solutions for applications such as power management, digital logic control, and high-frequency switching.

The integrated gate driver and its gate-source capacitance delivers high performance, along with its higher voltage tolerance, fast switching speeds and low threshold voltage. This makes it suitable for a wide range of applications, from computers and other electronic apparatus, to industrial automation and control.

The key characteristics of the SI1013R-T1-E3 that make it a high-performance MOSFET are its breakdown voltage, maximum drain current, on-resistance, maximum gate charge, and gate-source capacitance. The device features a breakdown voltage of 20V, a maximum drain current of 15A, an on-resistance of 0.09 Ω, a maximum gate charge of 140 nC, and a gate-source capacitance of 3.2 pF. Its low on-resistance and high break-down voltage allow it to provide efficient power management.

In addition, the SI1013R-T1-E3 has a low gate-source capacitance, which helps to reduce the power losses associated with switching. This makes it suitable for use in high-frequency switching applications, such as power-over-Ethernet (PoE) or clocked logic applications. The low gate charge also helps to reduce the time it takes for the MOSFET to switch on and off, reducing power losses from static current leakage.

The SI1013R-T1-E3 is designed to be used in common-source or source-follower configurations and is suitable for use in applications with a wide range of input voltages, including microcontrollers and power supplies. The device also features a fast switching speed that allows it to achieve higher efficiency and better power management.

The working principle of the SI1013R-T1-E3 is based on the transfer of charge carriers in the form of electrons and holes. When a positive voltage is applied to the gate of the MOSFET, electrons are pulled towards the gate, while holes are pushed away from the gate. This creates an inversion layer in the channel region between the gate and the source, which increases the conductivity of the channel.

When the gate voltage is increased further, the field-effect between the gate and the source increases, causing the inversion layer to become more heavily charged and this increases the conductivity of the channel even further. As the gate voltage increases, the current between the drain and the source increases as well, until the channel is in saturation.

The SI1013R-T1-E3 is highly suited for a variety of applications, including power management and high-frequency digital logic control and switching. Its fast switching speeds and low threshold voltage, low on-resistance, and high break-down voltage make it an ideal solution for a variety of applications.

The specific data is subject to PDF, and the above content is for reference