SI1056X-T1-GE3

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SC-89-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	236mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	400pF @ 10V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	8.7nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	89 mOhm @ 1.32A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SI1056X-T1-GE3 is a high power MOSFET (Metal–oxide–semiconductor field-effect transistor). It is a three-terminal power semiconductor device with low on-state resistance and low gate to source capacitance, making it well suited for high frequency applications. It is part of an innovative family of high-voltage MOSFETs that integrates Schottky-Barrier diodes, FETs (Field-Effect Transistors) and an ESD (Electrostatic Discharge) solution that minimizes stress on the FETs during normal operation and surge conditions.

Application Field

The SI1056X-T1-GE3 is a highly efficient device suitable for use in many applications. It is ideal for high-speed switching and power conversion in medical, industrial, automotive, telecommunications and other non-automotive applications. It has excellent surge and ESD robustness for greater reliability. It is also suitable for applications where high efficiency, fast turn-on/off speeds, and high-temperature operation are important.

Working Principle

A MOSFET is a three-terminal electronic device with an insulated gate. The SI1056X-T1-GE3 has two main terminals: source and drain, and one gate terminal. The source and the drain terminals are mainly responsible for the current-carrying operation, while the gate terminal is mainly used for controlling the threshold voltage that is required for the device to turn ON.The MOSFET operates on the principle of a field effect, which is a property of the semiconductor material. When bias voltage is applied between the gate and source terminals, an electrostatic field is created in the channel. This electrostatic field attracts electrons from the source and holes from the drain, forming a channel along the gate-source interface. This channel is then responsible for the current flow between the source and the drain.

Conclusion

The SI1056X-T1-GE3 is a high power MOSFET with excellent performance characteristics in terms of high speed switching and power conversion. Its low on-state resistance, low gate to source capacitance, and robust ESD protection make it an ideal choice for many applications. The working principle of the MOSFET is based on the principle of a field effect, where electrostatic fields are created in the channel when bias voltage is applied between the gate and source.

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