SI1073X-T1-GE3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SC-89-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	236mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	265pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	9.45nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	173 mOhm @ 980mA, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction

SI1073X-T1-GE3 is a family of single FET transistors available in a variety of package options and offering a wide range of features and configurations. This family of transistors can operate at high frequencies and deliver high output power. They are widely used in various applications, including power management, motor control, and audio amplifiers.

Application Field

SI1073X-T1-GE3 transistors are used in many different applications, from power management and motor control to audio amplification.Power Management: A variety of applications require efficient and reliable power management solutions. SI1073X-T1-GE3 transistors are an excellent choice for these applications, providing superior performance and reliability in high-frequency environments.Motor Control: Motor control requires transistors capable of operating at high frequencies and delivering high output power. The SI1073X-T1-GE3 is the ideal choice for these applications, as it provides reliable and efficient control of the motor.Audio Amplification: Audio amplifiers require transistors capable of operating at high frequencies and delivering high output power. The SI1073X-T1-GE3 is the perfect choice for these applications, offering reliable and efficient audio amplification.

Working Principle

The SI1073X-T1-GE3 family of transistors employ a single-transistor construction and operate off of two power supplies. The transistors are built using a diffused base, collector, and emitter construction. This construction allows the transistor to remain in its normal “OFF” state until it is switched on. When the transistor is turned on, the collector-base junction becomes forward biased, allowing current to flow between the collector and emitter.The SI1073X-T1-GE3 is designed to work with very low gate-source voltages and its maximum gate-source voltage is typically 5V. This makes the SI1073X-T1-GE3 an ideal choice for controlling high-power loads. The threshold voltage of SI1073X-T1-GE3 is also low, enabling it to turn on and off quickly and easily.The transistor is designed to work with low source-drain voltages and can handle up to 10 volts, making it an excellent choice for power-management applications. It has a low on-state resistance and is capable of handling currents up to 5 amps.

Conclusion

The SI1073X-T1-GE3 is a family of single FET transistors designed for use in high-frequency applications requiring efficient and reliable power management solutions. The transistors are built using a diffused base, collector, emitter construction, and can operate with very low gate-source voltages and low source-drain voltages. They feature low on-state resistance, enabling them to operate efficiently and reliably in applications ranging from power management and motor control to audio amplification.

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