
Allicdata Part #: | SI1031X-T1-GE3-ND |
Manufacturer Part#: |
SI1031X-T1-GE3 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 0.155A SC-75A |
More Detail: | P-Channel 20V 155mA (Ta) 300mW (Ta) Surface Mount ... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.12353 |
Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
Package / Case: | SC-75A |
Supplier Device Package: | SC-75A |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300mW (Ta) |
FET Feature: | -- |
Vgs (Max): | ±6V |
Gate Charge (Qg) (Max) @ Vgs: | 1.5nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 8 Ohm @ 150mA, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 155mA (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI1031X-T1-GE3 is a power MOSFET that is both powerful and reliable. This device is capable of handling high voltage and current, making it an ideal choice for a wide range of applications.
The product is a single N-channel enhancement mode MOSFET, meaning it can be used in applications where power and control are necessary. It can be used in a variety of applications such as amps, power supplies, motor drives, and switch-mode power supplies. With a current capability of 130A, it is an ideal choice for high power applications.
The SI1031X-T1-GE3\'s working principle is based on the MOSFET structures common in modern-day power applications. The device consists of a series of semiconductor cells, each with three layers. The top layer provides an insulated substrate, the middle layer is composed of a P-type material, and the bottom layer is composed of an N-type material. These layers are connected to form a three-terminal structure, with the source terminal being connected to the source voltage and the drain terminal being connected to the drain voltage.
At the heart of the MOSFET is the gate-source junction. This junction is responsible for the device\'s switching capabilities. Applied voltage across the gate-source junction causes a change in the structure of the MOSFET, which is where the control parameters of the device are set. The voltage that is applied to the gate is what causes the device to turn on and off.
The SI1031X-T1-GE3 also has an integrated ESD protection feature. This feature allows the device to withstand high voltages and current without suffering any damage. This feature is especially useful for applications that require high-temperature operation or where the device must endure long exposure to strong electrical fields.
The SI1031X-T1-GE3 is a reliable, high-performance power MOSFET that is suitable for a wide range of applications. Its integrated ESD protection feature ensures that the device can withstand high voltages and current without any damage. It is both reliable and powerful, making it an ideal choice for many power applications.
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