SI1031X-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI1031X-T1-GE3-ND

Manufacturer Part#:

SI1031X-T1-GE3

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET P-CH 20V 0.155A SC-75A
More Detail: P-Channel 20V 155mA (Ta) 300mW (Ta) Surface Mount ...
DataSheet: SI1031X-T1-GE3 datasheetSI1031X-T1-GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12353
Stock 1000Can Ship Immediately
$ 0.14
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300mW (Ta)
FET Feature: --
Vgs (Max): ±6V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 155mA (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI1031X-T1-GE3 is a power MOSFET that is both powerful and reliable. This device is capable of handling high voltage and current, making it an ideal choice for a wide range of applications.

The product is a single N-channel enhancement mode MOSFET, meaning it can be used in applications where power and control are necessary. It can be used in a variety of applications such as amps, power supplies, motor drives, and switch-mode power supplies. With a current capability of 130A, it is an ideal choice for high power applications.

The SI1031X-T1-GE3\'s working principle is based on the MOSFET structures common in modern-day power applications. The device consists of a series of semiconductor cells, each with three layers. The top layer provides an insulated substrate, the middle layer is composed of a P-type material, and the bottom layer is composed of an N-type material. These layers are connected to form a three-terminal structure, with the source terminal being connected to the source voltage and the drain terminal being connected to the drain voltage.

At the heart of the MOSFET is the gate-source junction. This junction is responsible for the device\'s switching capabilities. Applied voltage across the gate-source junction causes a change in the structure of the MOSFET, which is where the control parameters of the device are set. The voltage that is applied to the gate is what causes the device to turn on and off.

The SI1031X-T1-GE3 also has an integrated ESD protection feature. This feature allows the device to withstand high voltages and current without suffering any damage. This feature is especially useful for applications that require high-temperature operation or where the device must endure long exposure to strong electrical fields.

The SI1031X-T1-GE3 is a reliable, high-performance power MOSFET that is suitable for a wide range of applications. Its integrated ESD protection feature ensures that the device can withstand high voltages and current without any damage. It is both reliable and powerful, making it an ideal choice for many power applications.

The specific data is subject to PDF, and the above content is for reference

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