SI1079X-T1-GE3

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The SI1079X-T1-GE3 is a high performance Power Metal–Oxide–Semiconductor (Power MOSFET). It is packaged in a TO263 package and is able to handle high voltages up to 1,000V. The device features maximum power dissipation of 25W, and maximum load capacity of 1.5A. The SI1079X-T1-GE3 has a trench power Technology configuration which enables effective thermal dissipation.

Applications of the SI1079X-T1-GE3 are mainly in the field of power management circuits. It is suitable for applications that require high voltage, current and switching frequency, such as switching power supplies, DC-DC converters, light dimmers, battery chargers, and other power management systems. The device is also suited for automotive and industrial applications where high power density and low power loss is needed. The SI1079X-T1-GE3 is also suitable for applications where there is a lot of space restrictions and requires the efficient handling of power.

The working principle of the SI1079X-T1-GE3 is based on the principle of the power MOSFET. This device is built using a vertical DMOS structure, which offers superior performance compared to its ancestors with a conventional gate structure. The integrated silicon-gate structure of the device enables it to withstand a higher breakdown voltage of up to 1,000V, while providing superior performance and very low switching losses. The on-state resistance (RDS(on)) is also very low and is ideal in applications where high current needs to be switched on and off quickly. The device also comes with an advanced gate structure that provides good electrical noise immunity.

The SI1079X-T1-GE3 also has an efficient thermal design. It has a low thermal resistance, allowing the device to operate at high temperatures with minimal temperature rise. The device also has a built-in PTC (Positive Temperature Coefficient) resistor, which provides protection from over-temperature and over-current conditions. The device also has a soft-start feature that reduces the inrush current during start-up and switching of the device.

The SI1079X-T1-GE3 is an excellent choice in power management applications which require high voltage, high current, and high switching frequency. With its classic power MOSFET structure and innovative thermal design, the device is well suited for space-restricted applications in automotive and industrial applications.

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