SI4056DY-T1-GE3 Discrete Semiconductor Products

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SI4056DY-T1-GE3 Application Field and Working Principle

The Silicon Semiconductor SI4056DY-T1-GE3 Field Effect Transistor (FET) is a single pole, single throw (SPST) transistor that is designed for a variety of applications. It is well suited for use in digital timing circuits, switching circuits and low-voltage audio applications.

The FET operates on the principle of controlling the flow of electrons with an electric field, rather than a gate current instead of a closed bias as traditional bipolar transistors. The FET is controlled by a gate voltage, ranging from -3.0V to 10V, and a gate current ranging from 0.0A to 15mA. When the gate voltage is positive the transistor is turned on and when it is negative, the FET is turned off. The SI4056DY-T1-GE3 features a low threshold voltage of -2.5V, specific output capacitance of 1.5pF and typical gate leakage of 7.5nA. These design features enable excellent performance for low voltage logic applications.

The FET is a three-terminal device with a drain, gate and source. The drain and source are externally connected to circuits. When the gate is positive with respect to the source, current flows from the source to the drain, while the opposite case will cause current that goes from the drain to the source. The Voltage Rating of 500 volts and drain-source breakdown voltage of 500 volts enable the SI4056DY-T1-GE3 to be used in high voltage applications.

The pinch off voltage of the FET is critical since it determines the maximum drain current rating of the device. On the SI4056DY-T1-GE3, the pinch off voltage is measured at -3.0V. Its drain-source breakdown voltage is typically 1,000 volts which makes the device suitable for use in high voltage applications.

The power dissipation of the SI4056DY-T1-GE3 is rated at 250 mW, and its maximum current is 5.0 A. This device has a thermal resistance of 1.0°C/W, which means it can dissipate 1.0 Watts/°C of heat when it is operated within its power limits.

The SI4056DY-T1-GE3 can operate at frequencies of up to 500 MHz, allowing it to be used in a wide range of applications. Additionally, its on-resistance is typically 85 Ohms which is suitable for power applications.

The application fields of the SI4056DY-T1-GE3 are numerous and varied. This FET can be used in low-noise pre-amps, audio amplifiers and radio receivers, as well as in switching circuits. It is also widely used in digital timing circuits, digital logic circuits, RF ID circuits and various automotive, medical, aerospace and industrial equipment.

In conclusion, the Silicon Semiconductor SI4056DY-T1-GE3 FET is an ideal device for switching, timing, and audio applications because of its low power dissipation, low maximum current and high operating frequency capabilities. It has a wide variety of application fields and its features enable it to be used in a number of different types of applications.

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