SI4058DY-T1-GE3

Vgs(th) (Max) @ Id:	2.8V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	5.6W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	690pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	26 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	10.3A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

SI4058DY-T1-GE3 Application Field and Working Principle

Introduction

The SI4058DY-T1-GE3 is a N-Channel MOSFET belonging to the product family of the same name, manufactured and distributed by Vishay Semiconductor. It is provided in a common-gate configuration and is a general-purpose component intended for a wide range of applications.

Application Field

The SI4058DY-T1-GE3 is typically found in low-side switching applications, with typical uses including capacitor discharge or LED driving, or any situation where a low resistance connection between a voltage source and ground is required. The low RDS on of 8 mΩ (maximum) allows for low losses and high efficiency.Battery management systems are a common application for the SI4058DY-T1-GE3, due to its low RDS on and relatively low voltage rating making it ideal for switching power between cells. The device is also suitable for applications such as DC/DC buck converters, forward converters, SEPIC converters, OR-ing diagrams and MANO converters, for which its low on-state resistance is advantageous.

Functionality

The SI4058DY-T1-GE3 employs an N-Channel enhancement mode MOSFET, also known as a power MOSFET, with a drain-to-source voltage VDS of 40 V. It has a total gate charge of 82 nC, with a gate-to-drain charge of 11 nC for a total gate resistive charge of 71 nC, and a maximum continuous drain current of 6 A. The RDS on of the SI4058DY-T1-GE3 is a maximum of 8 mΩ at a drain-to-source voltage of 10 V, a gate voltage of 10 V and a junction temperature of 25°C.The device has a turn-on delay time of 45 ns and a maximum transition time of 30 ns at a drain current of 3 A. The turn-off delay time is 500 ns at a drain current of 4 A.

Working Principle

The working principle of the SI4058DY-T1-GE3 is based on a field effect transistor that acts as an electronic switch. The device has three connections; the source, drain and gate.When a negative voltage is applied to the gate, this repels the majority carriers in the channel and creates a conducting path between the source and the drain. This reduces the resistance between the two points and allows for current to flow between them.An increase in voltage will cause a corresponding increase in current, based on Ohm’s law. When the voltage at the gate reaches 0 V, the MOSFET is off and no current can flow.

Benefits

The SI4058DY-T1-GE3 offers a number of benefits over competing devices, such as its low RDS on, which reduces gate charge losses, improves speed and efficiency, and reduces power consumption.In addition, its low voltage rating of 40 V allows the device to be used in battery management systems and other applications that require staggered voltage, while its low gate charge means that it can be driven directly by logic circuits.Finally, the device is available in a surface-mount package, meaning that it can be directly mounted onto the PCB, reducing overall system size and cost.

Conclusion

The SI4058DY-T1-GE3 is a low-side N-Channel MOSFET, typically found in low-side switching applications such as LED driving, capacitor discharge and battery management systems, due to its low on-state resistance and low voltage rating.Its low gate charge and turn-on delay time, coupled with its surface-mount packaging, make it ideal for high-efficiency power conversion systems. As such, it is an ideal choice for DC/DC buck converters, forward converters, SEPIC converters OR-ing diagrams and MANO converters.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description