Allicdata Part #: | SI5853DC-T1-E3TR-ND |
Manufacturer Part#: |
SI5853DC-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 2.7A 1206-8 |
More Detail: | P-Channel 20V 2.7A (Ta) 1.1W (Ta) Surface Mount 12... |
DataSheet: | SI5853DC-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Package / Case: | 8-SMD, Flat Lead |
Supplier Device Package: | 1206-8 ChipFET™ |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.1W (Ta) |
FET Feature: | Schottky Diode (Isolated) |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 7.7nC @ 4.5V |
Series: | LITTLE FOOT® |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 2.7A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI5853DC-T1-E3 is a single P-channel enhancement-mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of transistor is used for switching and amplifying electronic signals in many different applications. It offers low on-state resistance and high power dissipation capabilities. As such, it is a popular choice for electronic designers across a wide range of industries.The SI5853DC-T1-E3 operates in the enhancement mode, which means that the gate is positively charged with respect to the source. When a positive voltage is applied to the gate, the transistor changes from an "OFF" state to an "ON" state where current begins to flow through the channel between the source and the drain. In this "ON" state, the resistance between the source and drain is minimized allowing a higher current to flow.The SI5853DC-T1-E3 is ideal for applications that require high current densities and low on-resistance, such as switching power supplies, DC-DC converters, and motor drivers. They are also used in low power switches for consumer electronics such as remote controllers or electronic toys. Another application for this type of transistor is as a power amplifier for audio systems and amplifiers.The SI5853DC-T1-E3 has a maximum on-resistance of 1.4 ohms and a maximum voltage of 58 volts, a breakdown voltage of 100 volts, and a maximum current rating of 3.2 amperes. Its on-state RDS (on) is 0.079 ohms and off-state RDS(on) is 4.0E-3 ohms. Its gate capacitance is 40 pF and its gate threshold voltage is 0.7V. This transistor is also capable of operating at temperatures up to 175°C, making it suitable for applications that require high temperature ratings.The SI5853DC-T1-E3 is a great choice for design engineers who need a reliable and robust transistor that can handle high temperature environments. The low on-state resistance and high voltage rating make this transistor perfect for use in switching power supplies and DC-DC converters. With its high current rating and low gate capacitance, it is also a great choice for audio systems and power amplifiers.In conclusion, the SI5853DC-T1-E3 is a single P-channel enhancement-mode MOSFET with a wide range of application fields. Its low on-state resistance, high voltage rating and high temperature rating make it perfect for many design engineering purposes. The excellent power dissipation capabilities of this transistor make it a great choice for switching power supplies, DC-DC converters, audio systems, motor drivers, and remote controllers.
The specific data is subject to PDF, and the above content is for reference
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