SI5855CDC-T1-E3

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SI5855CDC-T1-E3 is a field effect transistor (FET) specifically designed for use in audio, video, communications and other power applications requiring controlled turn-on and fast turn-off characteristics. It is constructed from a silicon carbide (SiC) substrate and includes a special carrier injection structure that allows it to conduct and block current with very fast switching times. The result is improved system efficiency, reduced crossover distortion and minimized off-state leakage.

A Field Effect Transistor (FET) is a device that utilizes an electric field to control the movement of electrons between two electrodes. Unlike a typical bipolar transistor, FETs are unipolar, meaning only one type of charge carrier (electrons or holes) is used to carry current through the transistor. FETs are normally composed of four basic parts: the gate, the source, the drain and the body. The gate is the control element of the FET, the source is where the supply of charge carriers come from, the drain is where the charge carriers are removed, and the body is the substrate on which all of these components are built.

The SI5855CDC-T1-E3 is a N-channel Metal Oxide Semiconductor FET (MOSFET). It functions as a low impedance variable resistance device with a gate threshold voltage. This gate voltage controls the flow of electrons between the drain and the source of the transistor. When the gate voltage is sufficiently high, the FET is in its on-state and electrons can flow freely through the transistor. When the gate voltage is too low, the transistor is in its off-state and no current is allowed to pass through.

The Si5855CDC-T1-E3 is a high performance device specifically designed for applications such as audio, video, and communications signal processing. It has a low on resistance (RDSon) of just 0.2 ohms, making it ideal for high power amplification and signal switching applications. Its high switching speed (TSW) of just 45ns allows for fast signal switching and reduced signal distortion. Additionally, its fast turn-on and turn-off characteristics make it ideal for pulse or burst mode operation, making it highly suitable for digital signal switching.

The Si5855CDC-T1-E3 has a number of other properties which make it an ideal choice for many different power and signal switching applications. Its high breakdown voltage (BVDSS) of 60V allows it to handle large voltages, while its high thermal stability (RθJC) allows it to maintain its performance in a wide temperature range. Additionally, its low gate-to-source capacitance (CISS) ensures fast switching and capacitive noise suppression, making it suitable for high speed and low noise applications. Finally, its low gate input capacitance (CGS) allows for low power consumption, making it an excellent choice for energy-efficient applications.

In conclusion, the SI5855CDC-T1-E3 is a high performance single MOSFET specifically designed for audio, video, and communications signal processing applications. It has a low on-resistance, fast switching speed and low power consumption, making it ideal for high power amplification and signal switching applications. Additionally, its high breakdown voltage and thermal stability make it suitable for a wide range of applications. Finally, its fast turn-on and turn-off characteristics make it suitable for pulse and burst mode operation, making it excellent for digital signal switching.

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