SI5858DU-T1-E3 Allicdata Electronics
Allicdata Part #:

SI5858DU-T1-E3TR-ND

Manufacturer Part#:

SI5858DU-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 20V 6A PPAK CHIPFET
More Detail: N-Channel 20V 6A (Tc) 2.3W (Ta), 8.3W (Tc) Surface...
DataSheet: SI5858DU-T1-E3 datasheetSI5858DU-T1-E3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: PowerPAK® ChipFET™ Dual
Supplier Device Package: PowerPAK® ChipFet Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.3W (Ta), 8.3W (Tc)
FET Feature: Schottky Diode (Isolated)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 8V
Series: LITTLE FOOT®
Rds On (Max) @ Id, Vgs: 39 mOhm @ 4.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI5858DU-T1-E3 is a FET that falls under the category of Single MOSFET devices. It is used in many applications which includes dc-dc converters, switching regulator, motor control, as well as load switching as it has a high current handling capability. The SI5858DU-T1-E3 can be used as a single device or as a pair of devices to create a dual-channel H-Bridge configuration to control the direction of a motor. The device also has a wide input voltage range from 4.5 V to 30 V, making it an ideal choice for automotive and other industrial applications.

The SI5858DU-T1-E3 comprises of a N-channel enhancement-mode MOSFET and a Schottky diode into a single package. The MOSFET, along with its Schottky diode, makes up the power portion of the package, while the Schottky diode provides diode protection for the MOSFET. The MOSFET portion of the package features low threshold voltage, a low gate charge, and a capability to drive high load current. It also has an excellent body diode, which provides fast switching times and a low reverse recovery time.

The working principle of the SI5858DU-T1-E3 is based on the principle of charge transfer and current amplification. The gate of the MOSFET is driven by the voltage supplied to it by the driver circuit. The input voltage is then amplified by the MOSFET which provides a greater amount of current flowing through the load. This principle of charge transfer and current amplification is the basis for how the SI5858DU-T1-E3 is used in many applications.

The SI5858DU-T1-E3 is designed to be robust and reliable and is suitable for high current and voltage applications. Additionally, it has an integrated over temperature protection mode, which when enabled, will turn the MOSFET off in the case of an extreme temperature rise. This feature ensures that the device keeps functioning reliably in conditions of heavy loads and high temperatures.

The SI5858DU-T1-E3 is a versatile power device that is used in many applications and provides a cost-effective solution for the demands of modern electronic systems. It has the features and capabilities needed to provide reliable power and load switching, making it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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