SM8S10ATHE3/I

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the SM8S10ATHE3/I

The SM8S10ATHE3/I is a surface mounted TVS-diodes device specifically designed for ESD protection and overvoltage applications. It is used to provide protection to sensitive components from the effects of Electrostatic Discharge (ESD) and of transient overvoltage caused by electromagnetic or electrostatic inductive events. The device is manufactured from a very low capacitance, hermetically sealed NPN-diode array, which enables performance and reliability to be maintained over a wide range of temperatures.

Application Field of the SM8S10ATHE3/I

The SM8S10ATHE3/I is used to protect a wide range of electronic circuits from Electrostatic Discharge (ESD) and transient overvoltage events. It is suitable for use in many high voltage protection applications, such as consumer electronic equipment, high speed data interfaces, and automotive electronics. The TVS-diode array provides excellent protection against transients, which helps to extend the life of the components it is protecting and limit the effects of component failure. In addition, the SM8S10ATHE3/I helps to reduce the risks of data loss and damage due to ESD events.

The SM8S10ATHE3/I is also suitable for use in a variety of portable electronic applications. Its very low input capacitance enables it to be used in portable devices with lower standby and operating current draw. The small size of the device, combined with its low capacitance, makes it ideal for these applications and provides an economical solution to protecting your equipment.

Working Principle of SM8S10ATHE3/I

The SM8S10ATHE3/I works by providing a low inductive electrical path between GND and the protected objects. This low path forms a closed loop, which any transients attempting to reach the protected objects must pass through. When a transient event occurs, the TVS diode array absorbs the energy and shunts it harmlessly away from the protected objects. The SM8S10ATHE3/I also provides ESD protection by providing a low-resistance path between the GND potential and the protected objects. This helps to prevent any damaging electrostatic charges from reaching sensitive components.

Furthermore, the SM8S10ATHE3/I works by enabling faster clamps than the majority of competing products. This faster response time allows for the protective circuitry to react much quicker to a transient event, thus providing superior protection. Additionally, thanks to its exceptionally low input capacitance, the SM8S10ATHE3/I helps to maintain signal integrity and reduce wasted power consumption.

Conclusion

In conclusion, the SM8S10ATHE3/I is an ideal TVS-diodes device for ESD protection and overvoltage applications due to its exceptionally low input capacitance, hermetically sealed NPN-diode array, and its superior protection capabilities. The device is suitable for use in a wide range of markets, including consumer electronics, automotive, and portable applications. Finally, the SM8S10ATHE3/I provides effective protection from transient events and ESD with its low-resistance path and fast response time.

The specific data is subject to PDF, and the above content is for reference