SM8S13ATHE3/I

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SM8S13ATHE3/I Application Field and Working Principle

SM8S13ATHE3/I is a fast-acting, bi-directional transient voltage suppressor (TVS). It is designed for protection against transients caused by lightning strikes or any overvoltage generated by inductive effects. This device can be used for switching or control devices, data lines, power supplies, power over Ethernet (PoE) systems, and also improves surge protection for any sensitive electronic equipment, such as laptops, phones, appliances, and other sensitive electronic equipment.

The application field of SM8S13ATHE3/I includes protection for telecom (telecommunications) and datacom (data communications) products, consumer electronics, automotive products, power supplies, and LED lighting products.

SM8S13ATHE3/I includes a bidirectional ESD (Electrostatic Discharge) protection diode array, which consists of 8 current-driven diodes. A high-temperature and low-leakage diode junction is incorporated into the protection circuitry, enabling a lower holding voltage with minimal clamp voltage. The design offers low capacitance and low leakage for greater ESD protection.

The working principle of SM8S13ATHE3/I is based on the principle of breakdown voltage. When the current-driven voltage across the diode increases above the breakdown voltage, the diode current will flow, reducing the voltage across the diode anode and cathode. The pre-resistor network connected to the anode will reduce the peak current, and the zener diode connected to the cathode will limit the power dissipation. The zener diode will regulate the voltage to a safe level.

SM8S13ATHE3/I has a voltage rating of 800V and a maximum peak pulse power rating of 143W. As such, it is suitable for high-speed AC or DC systems. It features an ultra-fast response time of 0.5ns, which is critical for the protection of high-speed systems against current spikes. The SM8S13ATHE3/I also has a wide operating temperature range of -55°C to +125°C.

In addition to its fast response time and wide operating range, SM8S13ATHE3/I offers superior EMI/RFI noise immunity, high surge protection, and low capacitance performance. The device’s integrated ESD protection prevents data transfer corruption and reduces system downtime in applications in challenging environments. It is a great choice for applications requiring cost-effective transient protection.

SM8S13ATHE3/I is an excellent choice for TVS-Diode applications due to its low capacitance, fast response time, and high surge protection. It is designed to protect sensitive components from transients and ESD events, ensuring reliable operation in harsh environments. With its superior surge protection, low leakage, and wide operating temperature range, SM8S13ATHE3/I is the ideal solution for a variety of TVS-Diode applications.

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