SPA02N80C3XKSA1

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MOSFETs are amongst the most widely used components within modern electronics as they can be found in almost any electronic device. SPA02N80C3XKSA1 is an example of one such MOSFET, being manufactured by Fairchild Semiconductor. This MOSFET is especially designed for applications in the power management and conversion sector, with a single FET with its maximum rated drain source voltage of 800V. In this article we\'ll look at the applications and working principles of the SPA02N80C3XKSA1.

Application Fields

The SPA02N80C3XKSA1 is a type of power MOSFET, commonly used in power conversion technologies due to its combined switching and linear performance. This FET is designed for high-speed operations, making it ideal for DC-DC converters, switching dc-dc converters, and power supply designs. It also has a low drain-source on-state resistance of 0.088ohm, which makes it more efficient when operating in these applications. This MOSFET is also able to withstand a high surge current of ±200A, allowing it to survive transients and short-term overloads.

This MOSFET is also a great option for lighting and automotive applications. With its low gate charge per unit area and fast switching speed, this MOSFET is able to achieve high power efficiency and low on-state voltage losses. This, combined with the high drain-source breakdown voltage of 300V, makes the SPA02N80C3XKSA1 an ideal choice for both indoor and outdoor lighting applications.

Working Principles

The primary function of the SPA02N80C3XKSA1 is to control the flow of electrical current between two terminals, the source and the drain. Inside the device is an insulation layer, known as a gate oxide. This prevents current from flowing between the source and drain without an external voltage applied, known as gate voltage. When gate voltage is applied, it modifies the electric field at the gate oxide and allows current to flow between the source and drain.

The SPA02N80C3XKSA1 has a drain-source breakdown voltage rating of 800V. This is the maximum voltage it can handle between the drain and source. This voltage is normally held at a much lower level by the gate voltage, but if it exceeds the 800V rating then breakdown may occur, resulting in the MOSFET being damaged.

The SPA02N80C3XKSA1 also has a low gate-source capacitance of 12pF. This is the total capacity between the gate electrode and source. When the gate voltage is applied, this capacitor allows the device to turn on and off quickly, making it suitable for high frequency applications.

It also has a drain-source on-state resistance rating of 0.088Ω. This is the resistance between the source and drain when the MOSFET is in the on-state. This value determines the amount of power the FET will dissipate at a given voltage and current. This can be reduced by increasing the gate voltage, allowing the MOSFET to operate at a higher efficiency.

Finally, the SPA02N80C3XKSA1 has a maximum drain current rating of 16A. This is the maximum current the FET can handle between the drain and source. This value should not be exceeded or the FET may be damaged.

Conclusion

The SPA02N80C3XKSA1 is a type of power MOSFET, ideal for high-speed operations in power conversion and management applications. It has a high drain-source breakdown voltage of 300V, a low gate charge per unit area, a low drain-source on state resistance of 0.088ohm, and a maximum drain current rating of 16A. With these properties, the SPA02N80C3XKSA1 is ideal for power supply, DC-DC converters, and lighting applications.

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