SPA06N60C3XKSA1 Allicdata Electronics
Allicdata Part #:

SPA06N60C3XKSA1-ND

Manufacturer Part#:

SPA06N60C3XKSA1

Price: $ 0.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 650V 6.2A TO-220
More Detail: N-Channel 650V 6.2A (Tc) 32W (Tc) Through Hole PG-...
DataSheet: SPA06N60C3XKSA1 datasheetSPA06N60C3XKSA1 Datasheet/PDF
Quantity: 1000
500 +: $ 0.83971
Stock 1000Can Ship Immediately
$ 0.93
Specifications
Series: CoolMOS™
Packaging: Tube 
Part Status: Not For New Designs
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 750 mOhm @ 3.9A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 260µA
Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
FET Feature: --
Power Dissipation (Max): 32W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack
Description

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The SPA06N60C3XKSA1 is a high voltage, N channel, MOSFET produced by Infineon Technologies AG. It is specially designed for power management and motor control applications. It is a 1.2kV N-channel MOSFET with an current rating of 150A.

The SPA06N60C3XKSA1 MOSFET is fabricated using the latest trench field-stop technology and design which makes it suitable for use in applications requiring high current conduction, such as switching power supplies. The latest trench field-stop technology enhances the performance of the device in high temperature applications and increases its power handling capability. It also features Trench-gated technology with superjunction cells which provide excellent linear current conduction and extremely low on-state resistance. The combination of this technology and the low on-state resistance makes the SPA06N60C3XKSA1 suitable for multiple applications. It is especially suitable for applications which require high current conduction or require high switching frequency.

The SPA06N60C3XKSA1 MOSFET also offers a high efficiency and low power dissipation. It is specially designed for high frequency switching applications, such as switching power supplies, resonant converters and motor control. The low on-state resistance makes it very suitable for power management applications, since it helps to minimize power losses and maintain the efficiency of the system. Additionally, the internal gate protection helps to protect the device from damage caused by electrostatic discharge, and reverse voltage

The SPA06N60C3XKSA1 MOSFET is a versatile device designed to meet the requirements of a variety of applications. It features excellent linear conduction, a low on-state resistance, high switching frequency capability and protection from ESD and reverse voltage. These features make it suitable for use in a variety of applications, such as power management, motor control, and switching power supplies.

The specific data is subject to PDF, and the above content is for reference

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