SPA04N80C3XKSA1

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SPAN40C3XKSA1 is a type of single-sector MOSFETs. It is a standard, N-type transistor that can be found in a wide variety of applications. It has been used in industrial, automotive, audio and motion control applications for over ten years.

The SPAN40C3XKSA1 has a temperature range of - 55°C to 150°C, making it suitable for a wide range of temperature environments. The maximum power dissipation at 25°C is 6W, which increases to 20W for higher temperatures. The typical drain-source off-state resistance is 17 ohms and the typical output capacitance is 1.5 nF. It has a peak gate-source voltage rating of 20 V and has a package size of 2 x 2 mm.

The application of SPA40C3XKSA1 is wide due to its capabilities and small size. It is used in motor control, audio applications, medical device, home appliances, security and safety systems and power supplies. It is also suitable for industrial applications in transportation, communication, military and aerospace. It has two variants: the SPAN40C3XKSA1-V and the SPAN40C3XKSA1-U, both designed for use in 1.8V to 12V power supplies.

The working principle of SPAN40C3XKSA1 is based on the MOSFET, Metal-Oxide-Semiconductor Field Effect Transistor, as its name suggests, consists of a field-effect transistor (FET) in which the source and drain terminals are separated by an oxide-insulated gate. This enables the application of a voltage to the gate and therefore allow the control of current flow between the source and the drain. The MOSFET is able to act as a switch, where it can be used to control on and off states, as well as provide variable gain or change the resistance of the circuit. The SPAN40C3XKSA1, in particular, has a voltage-controlled MOSFET, meaning that it can be used in voltage-regulating circuits and switching circuits.

The MOSFET works through electrostatic manipulation of the channel, where the application of a voltage to the gate will create a depletion zone forming an additional resistance. When the voltage is increased, this depletion zone grows and thus increases resistance between the source and the drain. The result is the supply current is reduced, in turn reducing the output of the MOSFET. When the gate voltage is lowered, it allows higher levels of current and thus produces a higher level of output.

In addition, the SPAN40C3XKSA1 is a low-cost transistor, providing a low on-state resistance and a low gate threshold voltage, making it a good choice for use in circuits with low power level requirements. It also provides a high switching speed due to its low gate charge, making it well suited for use in audio applications.

In short, the SPAN40C3XKSA1 is a convenient and versatile transistor, providing a low cost and high switching speed, suitable for a wide variety of applications. It is most commonly used in low power circuits, such as audio applications, motor control and home appliance applications, where its characteristics make it an ideal choice.

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