Allicdata Part #: | SPA08N50C3XKSA1-ND |
Manufacturer Part#: |
SPA08N50C3XKSA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 560V 7.6A TO220FP |
More Detail: | N-Channel 560V 7.6A (Tc) 32W (Tc) Through Hole PG-... |
DataSheet: | SPA08N50C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | CoolMOS™ |
Packaging: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 560V |
Current - Continuous Drain (Id) @ 25°C: | 7.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Vgs(th) (Max) @ Id: | 3.9V @ 350µA |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 750pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 32W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-FP |
Package / Case: | TO-220-3 Full Pack |
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The SPA08N50C3XKSA1 is a high voltage and high current N-channel MOSFET from Infineon. This power MOSFET is designed to meet the requirements of a wide range of applications, from consumer electronics and high-end portable devices to automotive power and industrial motor drive applications. It is a single transistor that is ideal for high efficiency, low power and wide range of applications.
This MOSFET has a high associated voltage rating of 8V, which can resist the voltage of the device during on-state operation. The saturation voltage of this MOSFET is of 3.2V, guaranteeing a low drain-source resistance when the transistor is running in the on-state. The continuous drain current is 8A, which is enough to power and run many applications. In addition, the maximum gate threshold voltage is 4V.
The working principle of the SPA08N50C3XKSA1 MOSFET is the same as for any other MOSFET. This transistor has four terminals, source, drain, gate and body. The main current flow is between the source and drain terminals. When no bias is applied to the gate terminal, the transistor will remain off and not allow current to flow. When a gate bias or input voltage is applied, the voltage present the gate controls the current flow between the drain and source. The gate bias or input voltage is often referred to as a switching voltage.
Due to its high voltage and current ratings, this MOSFET is implemented in many application areas and for various technology fields. For example, it’s used in telecom, and GSM and CDMA communication systems for power amplification. It’s also used for high efficiency switching power supplies for computer and laptop applications. Many audio and video devices are using this MOSFET for power management and conversion. In addition, these MOSFETs are often implemented in motor control systems and the automotive industry, providing reliable, high voltage and current power.
In summary, the SPA08N50C3XKSA1 is a high voltage, high current N-Channel MOSFET that is ideal for a variety of applications. The MOSFET works on the principle of controlling current flow by applying a gate bias or input voltage, and due to its reliable power and high efficiency it is used in many areas. It is a highly useful device in the application of power systems in fields such as telecoms, computers and laptops, audio and video devices, motor controls and the automotive industry.
The specific data is subject to PDF, and the above content is for reference
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