Allicdata Part #: | SPA06N80C3XKSA1-ND |
Manufacturer Part#: |
SPA06N80C3XKSA1 |
Price: | $ 1.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 800V 6A TO220FP |
More Detail: | N-Channel 800V 6A (Tc) 39W (Tc) Through Hole PG-TO... |
DataSheet: | SPA06N80C3XKSA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 1.40490 |
10 +: | $ 1.26630 |
100 +: | $ 1.01770 |
500 +: | $ 0.79153 |
1000 +: | $ 0.65584 |
Vgs(th) (Max) @ Id: | 3.9V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | PG-TO220-FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 39W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 785pF @ 100V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 900 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The SPA06N80C3XKSA1 is a type of discrete MOSFET component that belongs to the category of Transistors, FETs, and MOSFETs. In the Transistors - FETs, MOSFETs - Single category, the component is used in a wide range of applications.
The component is available in a variety of sizes and packages. Some of the features of the component include a very low on-resistance, fast switching speeds, and low gate charge. Additionally, the component is rated to work at temperatures up to 175 °C.
The component is designed for use in a variety of applications, including high-frequency switching applications, Class D audio amplifiers, power converters, and high-speed power circuits. In these applications, the component can be used to switch high amounts of power efficiently and quickly. Additionally, the component has very low power dissipation and is highly efficient.
The working principle of the SPA06N80C3XKSA1 component is simple. When a voltage is applied to the gate, it creates an electric field called a depletion region. This depletion region restricts the flow of electrons through the component and reduces the resistance between the source and drain. This allows the component to operate as a switch, which is essential for applications that require high-speed and efficient power switching.
The component’s performance is further enhanced by the use of an optimized, advanced perpendicular enhancement-mode structure. This structure allows for faster switching speeds, higher current capabilities and lower input/output capacitance, enabling the component to achieve an impressive level of performance.
In addition to its performance characteristics, the component is also highly reliable. The component is designed to withstand the harsh conditions found in a variety of environments, with the component being capable of operating at temperatures from -55 °C to 175 °C. Additionally, the component has been designed with low gate leakage current, making it suitable for use in high-temperature and high-frequency applications.
Overall, the SPA06N80C3XKSA1 component is an ideal choice for use in a variety of applications requiring fast switching speeds, low power dissipation, and high reliability. With its impressive performance characteristics, the component is well suited for use in Class D audio amplifiers, power converters, and high-speed power circuits.
The specific data is subject to PDF, and the above content is for reference
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