SPB03N60S5ATMA1 Discrete Semiconductor Products

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The SPB03N60S5ATMA1 is a fully-packaged 400V, 3A high-current, surface-mount PowerMESH™ MOSFET. Constructed with a single copper Drain tab, the SPB03N60S5ATMA1 is the smallest in its class and provides the industry’s lowest on-resistance. This high power, ultra-low on-resistance MOSFET makes it ideal for dc-dc conversions, uninterruptible power supplies (UPS), systems with high switching frequency in computer applications, desktop and server applications.

Application Field

The SPB03N60S5ATMA1 MOSFET is suitable for all high current operation applications where a very low on-resistance and low power consumption is desired. It has a high switching frequency performance, so it can be used in applications that require high frequency switching such as switching power supplies and motor drivers. In addition, the SPB03N60S5ATMA1 MOSFET is well-suited for use in high efficiency power converters, digital camera power supplies, low wattage DC-DC converters and other applications with high power demands.

Since the SPB03N60S5ATMA1 is a surface mount MOSFET, it is particularly useful in miniature and space-restricted applications. Its small size makes it an ideal choice for applications where space is a premium. Additionally, due to its low resistance, it is very power efficient.

Working Principle

At the heart of the SPB03N60S5ATMA1 is an advanced silicon-silicon oxide MOSFET process, which allows the device to obtain the lowest on-resistance in the industry. Additionally, its fully-packaged construction allows it to offer superior switching performance. The SPB03N60S5ATMA1 uses a proprietary design which includes a common-source P-channel configuration and a combination of two lateral double structures to minimize the on-resistance.

In operation, the SPB03N60S5ATMA1 converts the gate voltage to an extremely low resistance at the drain-source region. A positive gate voltage will turn on the MOSFET, allowing a large current to flow from source to drain. A negative gate voltage will turn off the MOSFET, preventing current from flowing. As a result, the SPB03N60S5ATMA1 can be used to control large currents with small gate voltages.

The SPB03N60S5ATMA1 also offers high input impedance, allowing for a wide range of operating voltages. Additionally, its high area rating and low on-resistance reduce the amount of power loss and heat generated, allowing it to be used in high current applications while still maintaining a high efficiency. Finally, due to its small size, it is an ideal choice for applications where space is limited.

Conclusion

The SPB03N60S5ATMA1 MOSFET is the ideal choice for applications that require high current operation and power efficiency. Its low on-resistance, high switching frequency performance, and small size make it suitable for a range of applications, such as power converters and motor drivers. Additionally, its fully-packaged construction ensures superior switching performance and reliable operation. As a result, the SPB03N60S5ATMA1 is the perfect choice for high current operation with high efficiency and reliable operation.

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