SPB08P06P

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	PG-TO263-3-2
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	420pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	13nC @ 10V
Series:	SIPMOS®
Rds On (Max) @ Id, Vgs:	300 mOhm @ 6.2A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Ta)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SPB08P06P Application Field and Working Principle The SPB08P06P is a single-level, medium power enhancement-mode field-effect transistor (FET) made by Powerex Inc. This device is especially well-suited for high-frequency applications because of its superior thermal and electrical characteristics.The SPB08P06P can be used in many different applications, including power supplies, motor drives, and power supply switching. It operates in a wide range of DC and AC supply voltages, from 7V to 100V. It is capable of carrying loads of up to 240A peak, with a drain-source voltage (Vdss) of up to 80V.The SPB08P06P contains two power amplification stages. The first stage is the P-Channel Junction Field Effect Transistor (JFET) stage, which has a Gate-Source voltage of -14V. The second stage is the N-Channel MOSFET stage. The MOSFET gains are subjected to change its value by increasing the relative Gate-Source voltages. It has been designed to be self-protected against over-voltage, over-current and over-heat, as a result of its increased drain-source on-resistance.The working principle of the SPB08P06P is based on the field-effect transistor (FET) principle. Its FET section has a N-Channel Field Effect Transistor (FET) that acts as a switching device between the source and drain. This allows it to control the current flow between the two terminals.In operation, the SPB08P06P is operated as shown in Figure 1. The gate of the FET is connected to a voltage supply and is used to vary the current between the source and drain terminals. By changing the gate voltage, the current flow can be controlled, thus allowing a switching action to occur.The FET is operated in enhancement mode, which means that it operates based on the amount of current that is flowing through the device. This is known as the drain current, and it is the current flow that ultimately determines the devices output. As the drain current increases, the FETs output will begin to turn on, allowing a greater current flow through the device.The SPB08P06P is commonly used in applications such as switching power supplies, motor accelerators and solid state relays. It is capable of handling up to 240A peak and has an on-resistance of 80V. This makes the device an ideal choice for applications requiring both high current and high voltage.In summary, the SPB08P06P is a single-level, medium power, enhancement-mode FET from Powerex Inc. It is suitable for use in high-frequency applications and can handle up to 240A peak, with a maximum on-resistance of 80V. Its operating principle is based on the field-effect transistor principles, and it operates in enhancement mode for improved power management. The SPB08P06P is an ideal choice for switching power supplies, motor accelerators and solid state relays.

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