SPB04N60C3ATMA1 Discrete Semiconductor Products

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The SPB04N60C3ATMA1 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This type of semiconductor device is a type of transistor that uses metal oxide gate material to control the current flow in the device. MOSFETs are the most frequently used transistors for the basic analog function of amplifying a signal with a change in voltage or current levels.

The SPB04N60C3ATMA1 is a general purpose MOSFET that can be used in a wide variety of applications. It is a power MOSFET device that is used to switch or amplify high currents and voltages. This device has high efficiency and can be used in power circuits such as AC/DC converters, DC/DC converters and lighting control.

The working principle of the MOSFET is based on the fundamental action of a voltage applied across a non-conducting material in an electric field. A voltage applied to a P-channel gate will cause electrons to move from the gate to the source region, causing a depletion layer to form on the gate-source junction. The amount of charge in this depletion layer changes with the applied voltage, which changes the conductivity of the device. The SPB04N60C3ATMA1 MOSFET has a maximum drain-to-source voltage at 60Volts (Vds) and a maximum drain current at 4 Amps (Id).

The SPB04N60C3ATMA1 also has a low On-resistance of 33mOhm. This allows the MOSFET to switch at much higher speeds than other kinds of transistors. This makes the SPB04N60C3ATMA1 ideal for use in high-frequency switching circuits, and in switching applications where a low circuit inductance is desirable. The SPB04N60C3ATMA1 is also used in audio power amplifiers, motor control circuits, and low-voltage / high- current power supplies.

The SPB04N60C3ATMA1 offers improved reliability due to its enhanced second-level package with higher surge current capability and lower on- resistance. This MOSFET also has a low thermal resistance and a fast recovery time which translates to reduced switching losses. The SPB04N60C3ATMA1 is ideal for high current, high speed, and high efficiency applications.

In summary, the SPB04N60C3ATMA1 is a general-purpose N-channel MOSFET that can be used in a wide variety of applications. It has a maximum armature current of 4 Amps and a maximum drain-to-source voltage of 60 Volts. It is highly reliable due to its enhanced package and low thermal resistance. It has a low ON-resistance which enables it to switch at high speeds, and is ideal for high current, high speed and high efficiency applications.

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