SPB07N60C3ATMA1 Discrete Semiconductor Products |
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Allicdata Part #: | SPB07N60C3ATMA1TR-ND |
Manufacturer Part#: |
SPB07N60C3ATMA1 |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 650V 7.3A D2PAK |
More Detail: | N-Channel 650V 7.3A (Tc) 83W (Tc) Surface Mount PG... |
DataSheet: | SPB07N60C3ATMA1 Datasheet/PDF |
Quantity: | 2000 |
1000 +: | $ 0.78747 |
Vgs(th) (Max) @ Id: | 3.9V @ 350µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | PG-TO263-3-2 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 83W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 790pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | CoolMOS™ |
Rds On (Max) @ Id, Vgs: | 600 mOhm @ 4.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.3A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tape & Reel (TR) |
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A Field Effect Transistor (FET) is a semiconductor device that uses an electric field to control the flow of current between two different gate terminals. The SPB07N60C3ATMA1 is a n-channel FET, designed specifically to provide switching, which can be controlled to both turn on and turn off the flow of current with great accuracy. This makes it an ideal device for high-power, high-efficiency applications in both industrial and consumer electronics.
Applications
The SPB07N60C3ATMA1 FET finds many different applications throughout the engineering industry. As it provides both high power output and low on-resistance, it is most commonly used in switching circuits, especially those found in power supplies. Due to its wide-range operating temperature, the FET is also highly suitable for use in motor drives and as crowbar protection. Additionally, it is also a popular choice for DC-DC converters and power train systems.
Working Principle
The FETs basic working principle is that it works as a voltage controlled resistor. A voltage level is applied to the gate terminal, which creates an electric field between the source and drain terminals. This electric field is what controls the flow of current in the FET. When the electric field is strong enough, the FET is turned ‘on’ and current flows freely between the source and drain terminals. When the electric field is weak, the FET is turned ‘off’ and no current flows.
In the case of the SPB07N60C3ATMA1 FET, the gate voltage required to turn the FET on is typically between 4V and 5V, and the maximum drain current is up to 60A. This makes it suitable for high-power applications, where the FET can handle the large amount of current needed to power the device.
Conclusion
The SPB07N60C3ATMA1 is a popular n-channel FET, designed for use in power supplies and switching circuits. It has a wide range of applications in both industrial and consumer electronics, and is ideal for high-power, high-efficiency operations. Its basic working principle is that of a voltage controlled resistor, and it is ‘turned on’ when the electric field created across the source and drain terminals is strong enough to allow the flow of current. This makes it well-suited to applications that require a large amount of current, such as motor drives, DC-DC converters, and power train systems.
The specific data is subject to PDF, and the above content is for reference
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