SQ1421EDH-T1_GE3 Discrete Semiconductor Products

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The SQ1421EDH-T1_GE3 is a device designed for applications such as motor control, synchronous rectification, and power factor correction. It is a MOSFET (metal-oxide semiconductor field-effect transistor) that is single-ended, allowing only one drain and one pickup to be connected to the gate. This is important to note, as most MOSFETs are available with two n- and two p-type terminals, allowing bi-directional flow of electrons. This makes the SQ1421EDH-T1_GE3 an ideal choice for use in applications where a single-ended output is required.

The SQ1421EDH-T1_GE3 features a low threshold voltage of 4.5V and a maximum drain current of 3A. This combination makes it well-suited for applications that require high current and low resistance. The device also features a very low on-state resistance of 75mOhm, and a total gate charge of only 30nC, which means it can switch quickly and efficiently. In addition, its breakdown voltage is 9V, and its maximum drain-source voltage is 17V.

The SQ1421EDH-T1_GE3 works on a simple principle of operation. When the gate voltage is increased, the current that can flow through the device increases. This increase in current causes the MOSFET to be in its “on” state, allowing current to flow through the device. Conversely, the device is in its “off” state when the gate voltage is decreased. This means that the device can be used to control the flow of current in an application simply by changing the voltage applied to the gate.

In a motor control application, the SQ1421EDH-T1_GE3 can be used to increase or decrease the speed of the motor, depending on the voltage applied to the gate. The device can also be used in applications such as synchronous rectification and power factor correction, by controlling the flow of current through the device. The device is also well-suited for use in high-efficiency switching-mode power supplies, where the decrease in power consumption associated with the use of the SQ1421EDH-T1_GE3 can significantly reduce system costs.

Overall, the SQ1421EDH-T1_GE3 is an efficient and cost-effective single-ended MOSFET solution for applications that require high current and low resistance. Its low on-state resistance, very low gate-charge, and robust breakdown voltage make it ideal for high-efficiency, high-power applications. Moreover, its simple principle of operation also makes it easy to use – a change in the gate voltage in the device can be used to quickly and precisely adjust current levels in an application. As such, the SQ1421EDH-T1_GE3 is a great choice for a wide range of applications.

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