SQ1470AEH-T1_GE3

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The SQ1470AEH-T1_GE3 is a single channel enhancement-mode enriched MOSFET, designed for high-density power management applications. It is a low-on-resistance, low-capacitance MOSFET, with a variety of gate drive options for differentially controlled topologies.

The main application fields for the SQ1470AEH-T1_GE3 are active switching, quick-response current monitoring, power management, and light-load effectiveness. Additionally, this MOSFET can be used in telecommunication, consumer devices, industrial equipment, and other power control and sensing applications.

The working principle of the SQ1470AEH-T1_GE3 is based on the same principles of other MOSFETs. A gate voltage is necessary to turn on the MOSFET, which is controlled by a gate driver. The gate voltage, in turn, controls the source-drain current flow and is dependent on the voltage applied to the gate. In order to maximize the performance of the device, it is necessary to ensure proper selection of the gate driver and gate voltage.

The SQ1470AEH-T1_GE3 is a small form factor MOSFET, with a maximum gate threshold voltage of 4.5V. The device is available in a thermally enhanced 8-pin Power Quad Flat directly-coupled Package (DDPC). It has an integrated drain-source Diode and body diode, and a low on-resistance of 0.055Ohms.

The device is designed to reduce EMI emissions, and includes an optional EMI guard-ring to improve EMI emissions performance. The projected EMI sensitivity is below the government and industry standards. The SQ1470AEH-T1_GE3 can also be easily paralleled with other MOSFETs for higher power applications.

The SQ1470AEH-T1_GE3 is designed for operation in extreme temperatures and operating voltage ranges, from -55°C to +150°C, and from -2.5V to +7V. It offers a lower operating power consumption, as well as enhanced switching characteristics. The device can be operated in both continuous and pulsed mode, and can easily switch high-current levels in a very short time.

For high-current applications, the SQ1470AEH-T1_GE3 is a reliable and cost-effective solution. It offers the benefits of higher efficiency, fast switching, minimal inductance, and high-frequency operations. Additionally, the device is proven to be able to withstand high-voltage transients and ESD protection.

In conclusion, the SQ1470AEH-T1_GE3 is a cost-effective and reliable solution for high-density power management applications. With its high-speed switching capabilities and low-on-resistance capability, this MOSFET is suitable for a wide range of applications, from active switching and power management to EMI emissions control in Telecommunication and consumer electronics.

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