SQ1431EH-T1_GE3

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The SQ1431EH-T1_GE3 is a single-gate N-channel MOSFET transistor, developed by Shanghai Semiconductor Co. Ltd, and is particularly suited for high frequency and low-noise amplifying applications.

It consists of two back-to-back connected N-type MOSFETs, where each consists of two N-type source, drain and refractor regions. The gates of both devices are connected in series. This enables an asymmetric switching characteristic and a higher performance than with a standard symmetrical single-gate MOSFET.

This transistor has a high breakdown voltage of 14.2 V and a maximum operating temperature of 150°C, ensuring both robustness and thermal stability. It also has excellent channel noise performance, with an on-resistance of 0.1 Ohms and an input capacitance of only 19 pF.

The SQ1431EH-T1_GE3 has many advantages and is applicable to different fields. For instance, it can be used in radio-frequency switches, as a high-frequency amplifier and in switching power supplies. It has also been used as a low-power linear amplifier in many transceiver applications, such as satellite communications and base stations. Moreover, it can be used in low-noise power amplifiers for Wi-Fi applications in consumer electronics.

The working principle of this transistor is fairly simple. When a small voltage is applied to the gate of the device, a channel is formed in the semiconductor material between the source and the drain, enabling current to pass through the channel. The resistance between the source and drain is referred to as the drain-source resistance (RDS). As the voltage on the gate increases, the channel expands, reducing the RDS, and thus causing the current to flow more easily through the transistor. This allows the transistor to act as an amplifier and increase the power of the input signal.

Overall, the SQ1431EH-T1_GE3 is a highly advantageous and reliable single-gate N-channel MOSFET transistor, which is both robust and versatile in a wide range of applications. Its unique asymmetrical switching characteristic and excellent channel noise performance make it an ideal choice for high frequency and low-noise amplifying applications.

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