SQ1440EH-T1_GE3 Allicdata Electronics
Allicdata Part #:

SQ1440EH-T1_GE3TR-ND

Manufacturer Part#:

SQ1440EH-T1_GE3

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 1.6A SC70-6
More Detail: N-Channel 60V 1.7A (Tc) 3.3W (Tc) Surface Mount SC...
DataSheet: SQ1440EH-T1_GE3 datasheetSQ1440EH-T1_GE3 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.12128
Stock 1000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 344pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
Series: Automotive, AEC-Q101, TrenchFET®
Rds On (Max) @ Id, Vgs: 120 mOhm @ 3.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SQ1440EH-T1_GE3 is a silicon N-Channel enhancement mode power field effect transistor (FET), designed to replace bipolar (being two-gap) transistors in many applications. It is designed to be used in digital and analog switching devices, audio amplifier circuits, and switching power supplies. It can also be used for battery-operated applications, DC/DC converters, power amplifier circuits, and switching regulators. The SQ1440EH-T1_GE3 is a single Mosfet device.

The SQ1440EH-T1_GE3 is ideal for applications requiring a high current (up to 15 amperes) at a very low on-state voltage drop. The FET has a threshold voltage of 4.7 volts, and a drain-to-source on-state resistance as low as 0.14 ohms. It boasts of a low on-state gate charge and a wide operating temperature range. The on-state gate charge of the SQ1440EH-T1_GE3 is just 6.3 nanocoulombs.

The main application of the SQ1440EH-T1_GE3 is in high-current switching applications. It is an excellent choice for DC-DC converters, power switching, and power amplifier circuits. It is also quite suitable for audio applications, due to its low switching losses, as well as excellent thermal performance. For low-level analog signals, the SQ1440EH-T1_GE3 boasts of low noise and low input capacitance.

The working principle of the SQ1440EH-T1_GE3 is simple enough. When the gate voltage of the transistor is increased, the channel between the source and the drain is created in the body of the FET. This allows current to flow between the two, which is regulated by the voltage at the gate. When the gate voltage decreases, the channel closes, and the current between the source and the drain is stopped.

The SQ1440EH-T1_GE3 is a great choice for applications requiring a high current, low on-state resistance, and low switching losses. Its excellent linear and thermal performance makes it suitable for a variety of applications, from high current switching to low-level analog signals, and from audio to DC/DC converters. The working principle of the SQ1440EH-T1_GE3 is simple enough, and its excellent specs make it a great choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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