
Allicdata Part #: | SQ1440EH-T1_GE3TR-ND |
Manufacturer Part#: |
SQ1440EH-T1_GE3 |
Price: | $ 0.13 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 60V 1.6A SC70-6 |
More Detail: | N-Channel 60V 1.7A (Tc) 3.3W (Tc) Surface Mount SC... |
DataSheet: | ![]() |
Quantity: | 1000 |
3000 +: | $ 0.12128 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SC-70-6 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 344pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 5.5nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 120 mOhm @ 3.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SQ1440EH-T1_GE3 is a silicon N-Channel enhancement mode power field effect transistor (FET), designed to replace bipolar (being two-gap) transistors in many applications. It is designed to be used in digital and analog switching devices, audio amplifier circuits, and switching power supplies. It can also be used for battery-operated applications, DC/DC converters, power amplifier circuits, and switching regulators. The SQ1440EH-T1_GE3 is a single Mosfet device.
The SQ1440EH-T1_GE3 is ideal for applications requiring a high current (up to 15 amperes) at a very low on-state voltage drop. The FET has a threshold voltage of 4.7 volts, and a drain-to-source on-state resistance as low as 0.14 ohms. It boasts of a low on-state gate charge and a wide operating temperature range. The on-state gate charge of the SQ1440EH-T1_GE3 is just 6.3 nanocoulombs.
The main application of the SQ1440EH-T1_GE3 is in high-current switching applications. It is an excellent choice for DC-DC converters, power switching, and power amplifier circuits. It is also quite suitable for audio applications, due to its low switching losses, as well as excellent thermal performance. For low-level analog signals, the SQ1440EH-T1_GE3 boasts of low noise and low input capacitance.
The working principle of the SQ1440EH-T1_GE3 is simple enough. When the gate voltage of the transistor is increased, the channel between the source and the drain is created in the body of the FET. This allows current to flow between the two, which is regulated by the voltage at the gate. When the gate voltage decreases, the channel closes, and the current between the source and the drain is stopped.
The SQ1440EH-T1_GE3 is a great choice for applications requiring a high current, low on-state resistance, and low switching losses. Its excellent linear and thermal performance makes it suitable for a variety of applications, from high current switching to low-level analog signals, and from audio to DC/DC converters. The working principle of the SQ1440EH-T1_GE3 is simple enough, and its excellent specs make it a great choice for many applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
SQ1470EH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 30V 2.8A SC70... |
SQ1464EEH-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CHAN 60V SC-70N-... |
SQ1470AEH-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 30V 2.8A SC70... |
SQ1440EH-T1_GE3 | Vishay Silic... | 0.13 $ | 1000 | MOSFET N-CH 60V 1.6A SC70... |
SQ1421EDH-T1_GE3 | Vishay Silic... | 0.12 $ | 1000 | MOSFET P-CH 60V 1.6A SC70... |
SQ1420EEH-T1-GE3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 60V 1.6A SC70... |
SQ1431EH-T1_GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 30V 3A SC70P-... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
