Allicdata Part #: | SQA403EJ-T1_GE3TR-ND |
Manufacturer Part#: |
SQA403EJ-T1_GE3 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 30V |
More Detail: | P-Channel 30V 10A (Tc) 13.6W (Tc) Surface Mount Po... |
DataSheet: | SQA403EJ-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12802 |
Series: | Automotive, AEC-Q101, TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1880pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 13.6W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Package / Case: | PowerPAK® SC-70-6 |
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SQA403EJ-T1_GE3 are power metal oxide semiconductor field-effect transistors (MOSFET) of single type. These transistors have an impressive operating temperature range from -40℃ to +125℃ and can be used in a myriad of applications.
Application Field
The SQA403EJ-T1_GE3 transistors can be used in many applications and industries due to their wide operating temperature range. These transistors are mostly used in motor control and power applications, mainly due to their low on-resistance and their high power dissipation capacity. Motors that run on DC and AC power can benefit greatly from the efficient running of the transistor. Other applications that can use these transistors include power switching, and automobile signals such as door locks, fog lamps and wipers.
These transistors are also used in the aerospace industry in navigation and control systems, as well as in medical equipment such as MRI machines, patient monitors, and ventilators. The SQA403EJ-T1_GE3 transistors are also utilized in consumer electronic products like printers, TVs, and washing machines.
Working Principle
The working principle behind MOSFET transistors is based on the semiconductor effect. When a voltage is applied between the channel (gate) and the substrate, mobile electrons are attracted towards the gate. This causes a current to flow through the channel, and the transistors become conductive, allowing electric current to flow. Generally MOSFETs are smaller and more efficient than other types of transistors, making them suitable for efficient power management.
The SQA403EJ-T1_GE3 transistors are built with a double sided structure, with a short drain and source, allowing for fast switching speeds and a low on-resistance. This makes the transistor ideal for applications that require high frequency switching. It also has a high breakdown voltage, with a drain to source voltage of up to 100 V.
The SQA403EJ-T1_GE3 transistors have a hermetic package, which means that the packages are sealed completely, which is important for barrier protection in many applications. This hermetic package also makes the product resistant to external environmental shocks and vibrations, making them ideal for harsh environment applications.
The SQA403EJ-T1_GE3 transistors are built with the latest process and technology and come with extended electrical and mechanical life. These transistors are built in compliance with all industry quality and safety requirements, ensuring top quality and efficient performance.
Overall, the SQA403EJ-T1_GE3 transistors are very reliable and efficient. The wide operating temperature range, low on-resistance and high power dissipation, as well as the hermetic packaging and extended electrical and mechanical life make the SQA403EJ-T1_GE3 transistors the ideal choice for many power related applications.
The specific data is subject to PDF, and the above content is for reference
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