Allicdata Part #: | SQA410EJ-T1_GE3TR-ND |
Manufacturer Part#: |
SQA410EJ-T1_GE3 |
Price: | $ 0.16 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 20V 7.8A SC70-6 |
More Detail: | N-Channel 20V 7.8A (Tc) 13.6W (Tc) Surface Mount P... |
DataSheet: | SQA410EJ-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.14969 |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 13.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 485pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 8nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 28 mOhm @ 5A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 7.8A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQA410EJ-T1_GE3 is a single-stage enhancement mode power MOSFET with a wide range of applications, including Switch Mode Power Supplies (SMPS), industrial power, UPS, and DC-DC converters. This MOSFET is highly efficient and has excellent performance with low on-resistance, low gate charge, low threshold voltage, and high-frequency operation.
This device is a P-channel enhancement mode MOSFET, which can be used in a variety of applications, including motor control, power supply and brushless motor controllers, as well as switching applications. Its structure is based on an insulated-gate bipolar transistor (IGBT) structure, and its structure ensures low on-resistance and low gate charge for high frequency operations. The SQA410EJ-T1_GE3 is available in a 4-pin SOT-23 package, with four leads (one source, one drain, and two gates).
The working principle of the SQA410EJ-T1_GE3 involves a process whereby the gate voltage controls the current flow between the source and drain. When the gate voltage is low, the current is blocked and no current flows between the source and drain. However, when a positive gate voltage is applied, a current will flow between the source and drain. This is because the positive gate voltage reduces the energy barrier between the source and drain, allowing the electrons to flow more freely. This reduces the voltage drop across the MOSFET, allowing for a greater current flow.
In terms of applications, the SQA410EJ-T1_GE3 can be utilized in power supply systems, motor control applications, switching circuits, and DC-DC converters. The device can operate at high frequencies, making it suitable for high frequency switching applications. Additionally, its high efficiency and low on-resistance make it suitable for use in applications where power efficiency and lower power consumption are key requirements.
The SQA410EJ-T1_GE3 has proven to be reliable for use in a variety of applications, making it a popular choice for designers. Additionally, its low cost and availability make it an attractive option for designers and engineers alike. With its excellent performance and power efficiency, the SQA410EJ-T1_GE3 is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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