Allicdata Part #: | SQA470EEJ-T1_GE3TR-ND |
Manufacturer Part#: |
SQA470EEJ-T1_GE3 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CHAN 30V POWERPAK SC-70 |
More Detail: | N-Channel 30V 2.25A (Tc) 13.6W (Tc) Surface Mount ... |
DataSheet: | SQA470EEJ-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12802 |
Vgs(th) (Max) @ Id: | 1.6V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 13.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 453pF @ 20V |
Vgs (Max): | ±12V |
Gate Charge (Qg) (Max) @ Vgs: | 5.2nC @ 4.5V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 56 mOhm @ 2A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 2.25A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQA470EEJ-T1_GE3 is a single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) produced by Panasonic Semiconductor Solutions, a leading supplier of semiconductor devices. The SQA470EEJ-T1_GE3 is a low-voltage MOSFET for automotive applications. It is designed to be used with 12-volt and 24-volt systems, has a low on-state resistance (RDS(on)), and is capable of switching up to 4-amp currents.
The SQA470EEJ-T1_GE3 is a N-channel MOSFET, meaning it uses a semiconductor material to control the flow of the current between source and drain. The action of the semiconductor material is controlled by the voltage applied to the gate, which acts as an electronic switch. By applying a specific voltage to the gate, the current flow between source and drain can be easily controlled. The MOSFET is designed to work in an environment of up to 105°C.
The SQA470EEJ-T1_GE3 is a highly efficient, low-on-state-resistance (RDS(on)) MOSFET, making it ideal for automotive applications. Its low RDS(on) value helps to reduce power loss, increasing efficiency and reliability. The SQA470EEJ-T1_GE3 also has a lower switching threshold voltage (VGS(th)) and higher maximum drain current (ID(max)) value than other MOSFETs, allowing for greater current switching capabilities.
The SQA470EEJ-T1_GE3 is typically used as a switch in automotive power and signal lines, ranging from headlight control, radio power, and HVAC controls to ECU control, fuel injection system, and ABS systems. Its low RDS(on) and high current capabilities makes it ideal for applications that require efficient and reliable switching between power and signal lines with minimal losses.
The SQA470EEJ-T1_GE3 is a robust and reliable MOSFET suitable for use in automotive and other demanding applications. Its low on-state resistance, high current capabilities, and low switching threshold voltage make it ideal for a wide range of applications and environments. The device is also protected by an overvoltage clamp for increased safety and reliability.
The specific data is subject to PDF, and the above content is for reference
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