Allicdata Part #: | SQA405EJ-T1_GE3TR-ND |
Manufacturer Part#: |
SQA405EJ-T1_GE3 |
Price: | $ 0.14 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CHAN 40V |
More Detail: | P-Channel 40V 10A (Tc) 13.6W (Tc) Surface Mount Po... |
DataSheet: | SQA405EJ-T1_GE3 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.12802 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | PowerPAK® SC-70-6 |
Supplier Device Package: | PowerPAK® SC-70-6 Single |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 13.6W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1815pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
Series: | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SQA405EJ-T1_GE3 is an enhancement-mode power field-effect transistor designed for use in a variety of electronic control and switching applications. It is ideal for use in high-current, low-voltage circuit designs, such as DC-DC converters, power management systems and power-switching applications. As a single device, it offers both high-current and low-on-resistance features.
The SQA405EJ-T1_GE3 has an N-channel enhancement mode structure generated from the integration of two highly doped source/drain/gate regions. This provides a high specific on-resistance and an improved threshold voltage and turn-on performance. This type of construction also allows for higher junction temperature operation, greater stability at high temperatures, and improved switching performance.
This device can be utilized for both Single-ended and Differential-ended applications and can be operated with either constant voltage or constant current switching operations. It is suitable for use in AC and DC circuits, as it can handle high voltages and currents. Some of its most common uses include: DC-DC converters, power management systems, DC motor control, power-switching applications, and pulse-width modulation (PWM).
The working principle of the SQA405EJ-T1_GE3 is based on the transfer of electrons between the source and drain region when an electric field is present between the gate and source. A negative voltage applied to the gate terminal will cause electrons to be attracted to the gate, forming a conducting channel between the source and drain. The amount of current that passes through this channel depends on the voltage applied to the gate and the size of the gate region.
In addition to its impressive ability to handle high voltages and currents, this device is also capable of withstanding large temperature variations, since its operating temperature range is between -55°C to 150°C. Its small size also allows for efficient thermal dissipation and makes the device ideal for high-density applications.
The SQA405EJ-T1_GE3 power FET offers a wide range of features and capabilities making it an excellent choice for applications that require high-power switching and/or power management. Its high-current, low-on-resistance, and temperature range make it suitable for a variety of applications in the most demanding operating conditions. While the small size and low-power consumption make it an excellent choice for high-density or low-power applications.
The specific data is subject to PDF, and the above content is for reference
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