SQM40014EM_GE3

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SQM40014EM_GE3 is a high-performance trench-gate field-effect transistor (FET) developed by Semikron company, suitable for switching and high-frequency at 1200 Hz. This single-MOSFET device is built-in a TO-220 package composed of four thyristors (D1, D2, S1, S2).

Application Field

SQM40014EM_GE3 is typically used in applications such as motor control, industrial drives, welding machines, compressor control, motor control, switch-mode power supplies (SMPS), and rectifier control. In rack-and-pinion, worm-gear, swing-arm and other systems, it can be used as interruptors, short-circuit protection, frequency and phase control. The operating temperature range is -40℃ to +125℃.

Working Principle

When it is turned on, the drain-source voltage Vds starts to rise gently, and the channel will gradually appear, allowing electrons to flow from the source to the drain. As long as the supply and drain voltages are higher than the rated gate voltage, the gate voltage is supplied using a square wave and the MOSFET remains in the OFF state for a certain time until the gate voltage is lower than the drain-source voltage, allowing electrons to flow from the source to the drain, so that current amplifying conductive channels will appear to start conduction.

When the MOSFET is turned off, the gate-source voltage will rise, owing to the timing characteristics of an RC circuit, so the drain-source voltage Vds starts drop. As the drain-source voltage Vds drops below the threshold voltage of the MOSFET, the MOSFET will be turned off and the conduction of electrons will be interrupted.

Consequently reducing the power losses due to switching, SQM40014EM_GE3 provides high switching performance and excellent thermal efficiency, making it an ideal component for large current applications and low voltage supply systems.

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