SQM47N10-24L_GE3

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The SQM47N10-24L_GE3 is a silicon-controlled MOSFET (metal oxide semiconductor field-effect transistor) designed for power semiconductor switch applications. It is a single-gate device, meaning that it is operated by a single electrical field. This versatile device can be used for a variety of power electronics applications, such as DC-DC converters and power switches. This article will discuss the application field of the SQM47N10-24L_GE3 and its working principle.

Application Field

The SQM47N10-24L_GE3 was designed with the goal of providing simplified switching functions in compact and reliable form. The device’s small form factor and power-handling capabilities make it suitable for a wide range of applications, including:

• DC-DC converters
• Switched-mode power supplies
• Motor controls
• Switch-mode amplifiers
• Power switching in consumer electronics
• Automotive electronics

The device’s wide range of operating voltages (12V to 24V) make it especially suitable for the automotive industry, where the environment is quite harsh. For example, the device’s ability to withstand temperatures up to 175 °C make it ideal for use in applications such as dynamic braking and HVAC systems.

Due to its high current-handling capabilities, the SQM47N10-24L_GE3 is a good choice for applications which require high power switches. The device is rated at over 10 amps of continuous current, which makes it suitable for powering high-power LEDs and other large electrical loads.

Working Principle

The working principle of the SQM47N10-24L_GE3 involves the application of an electrical field to the gate terminal of the device. The field drives charge carriers, electrons and/or holes, away from the source and into the drain region of the transistor. This results in the formation of a depletion layer (made up of charge carriers) between the source and the drain. This layer acts as an electrical insulator, preventing the flow of current between the two regions.

The drain-source current is then controlled by the gate-source voltage. When the gate-source voltage exceeds a certain threshold voltage, the depletion layer disappears, allowing current to flow from the source to the drain. The magnitude of the current is then controlled by the magnitude of the gate-source voltage.

In summary, the SQM47N10-24L_GE3 is a versatile and robust device which can be used for a variety of power electronics applications. Its high current handling capabilities, wide operating voltage range, and reliable operation make it a suitable choice for various power switching applications. Its working principle is based on the application of an electrical field to the gate terminal of the device, which controls the flow of current between the source and drain regions.

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