SST39VF200A-70-4I-B3KE

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The SST39VF200A-70-4I-B3KE memory module is a 32M x 8-bit CMOS single power Flash memory manufactured by Microchip Technology Inc. This memory device utilizes the advanced CMOS process for low-power operation and increased efficiency. The memory device is designed for application fields such as digital consumer electronics, MP3 players, digital cameras, set-top boxes (STBs), automotive electronics, industrial automation and embedded systems.

The SST39VF200A-70-4I-B3KE memory device can operate at a voltage range of +2.7 to +3.6V. It contains a controllerless design that allows the system to access any address by driving the CE#, OE# and WE# pins. The device supports four different access modalities, i.e., random standby, single read, multiple read and page read, which use consecutive data output feature and primary address line (A10) to identify which page is being read. The page size, which is 64-bytes, can be defined by the A10 pin.

The SST39VF200A-70-4I-B3KE memory device supports a number of control signals for controlling operations such as power management, protection, erase and program. Some of the important control signals are CE#, OE#, WE#, RST#, PP#, WPR#, and PROC. CE#, OE#, WE# and RST# pins are used for controlling accesses to the memory device. The PP# pin is the input signal used for entering into power management mode. The WPR# pin is used for entering into write protection mode. The PROC pin is used for entering into programming mode.

The SST39VF200A-70-4I-B3KE memory device is also capable of sustaining various forms of data loss protection such as ECC (Error Checking and Correction) and EDC (Error Detection and Correction). It also provides flexible address controls, internal and external protection and power management control. Furthermore, the device supports Bit Error Rate test (BERT), Signature Capture and comparison (SigCap) functions to ensure data integrity. The ECC process can detect multiple bit errors within one word, and the EDC process can detect and correct a single bit error within one word.

The working principle of the SST39VF200A-70-4I-B3KE memory device is based on the Flash memory technology. It is a nonvolatile memory device that can store data even without a power source. Single-bit cells are used to store one bit of information, while multi-bit cells are used to store multiple bits of information. The devices also use page architecture and provide random access. Data is written onto the memory cell array using the program operation. The data is then read using the read operation and can be erased with the erase operation.

The SST39VF200A-70-4I-B3KE memory device is widely used in a variety of applications such as digital consumer electronics, MP3 players, digital cameras, automobiles, set-top boxes, industrial automation and embedded systems. The device\'s low-power consumption, high speed, CMOS technology and wide temperature range make it suitable for a large number of applications. Its advanced control signals and protection features also makes it a reliable device for data retention and data access control.

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