Allicdata Part #: | SST39SF020A-70-4C-WHE-ND |
Manufacturer Part#: |
SST39SF020A-70-4C-WHE |
Price: | $ 0.94 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 32TSOP |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 70ns 32-T... |
DataSheet: | SST39SF020A-70-4C-WHE Datasheet/PDF |
Quantity: | 820 |
1 +: | $ 0.85050 |
25 +: | $ 0.77868 |
Series: | SST39 MPF™ |
Packaging: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.488", 12.40mm Width) |
Supplier Device Package: | 32-TSOP |
Base Part Number: | SST39SF020A |
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Memory devices have become increasingly important as technology advances and memory density increases. One of the most popular memory devices is the SST39SF020A-70-4C-WHE, which is a non-volatile 2 megabit (256K x 8) Multi-Purpose Flash. This device is suitable for all applications where space is at a premium and long life, low power performance is needed.
The SST39SF020A-70-4C-WHE contains several features that make it an ideal choice for many applications. These include: sector and block erase/programming capability, a 5V operating voltage that allows for flexible compatibility with many existing systems, and a high endurance flash memory with no wear-out characteristics at erase/write 1,000,000 cycles.
This device is also easy to interface with many systems and microcontrollers, and supports both 8-bit and 16-bit Intel microprocessors. It also has a low power standby mode that allows for very low power consumption.
Applications for the SST39SF020A-70-4C-WHE include a wide variety of products, such as communications systems, consumer electronics, automotive systems, industrial control systems, and embedded systems. This device is also used in applications where space is a premium, such as cellular telephones, digital cameras, and personal digital assistants (PDAs).
The working principle of the SST39SF020A-70-4C-WHE is based on a single-transistor memory cell. Each memory cell contains a control gate, a floating gate, and a substrate. A current flowing through the substrate charges the floating gate, which provides the non-volatility of the Flash memory. During programming and erasing operations, the control gate is charged and discharged, allowing for the changing of the state of the floating gate and the implementation of the desired programming and erasing operations.
The SST39SF020A-70-4C-WHE is a very versatile memory device, capable of being used in a wide variety of applications. Its high endurance and low power consumption make it an ideal choice for many applications, and its sector and block erase/programming capabilities expand its usability in even more applications. With easy interface with many systems, the SST39SF020A-70-4C-WHE is very well-suited for a variety of uses.
The specific data is subject to PDF, and the above content is for reference
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