SST39VF1601C-70-4C-B3KE

Series:	SST39 MPF™
Packaging:	Tray
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	10µs
Access Time:	70ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFBGA
Supplier Device Package:	48-TFBGA (6x8)
Base Part Number:	SST39VF1601C

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Overview

The SST39VF1601C-70-4C-B3KE is a low-power, high-density static random access memory (SRAM) device. It is specifically designed for applications where power conservation and space optimization are key requirements. Additionally, this memory is optimized for use in industrial, automotive, and telecommunication applications, making it an ideal choice for cost-sensitive projects that don’t require a high-end solution. This article will explore the application field and working principle of the SST39VF1601C-70-4C-B3KE.

Application Field

The SST39VF1601C-70-4C-B3KE is designed for use in industrial, automotive, and telecommunication applications. It is ideal for embedded applications such as motor control, process control, factory automation, power management, and remote terminal unit (RTU) systems. It can also be used in remote monitoring applications, such as home security and surveillance systems. Furthermore, due to its low power requirements, it is suitable for use in wireless applications.

Working Principle

The SST39VF1601C-70-4C-B3KE is a static random access memory (SRAM) device. SRAMs are memory devices which are capable of storing data without the need for continuous refreshing. They are composed of a matrix of transistors, with each transistor having two RAM cells—one for each state of data being stored.Each transistor can be turned ‘ON’ or ‘OFF’ depending on the state of data that needs to be stored. When the transistor is turned ‘ON’, the corresponding data bit is stored. When the transistor is turned ‘OFF’, the data bit is erased. This process is repeated continuously for each data bit that needs to be stored in the SRAM device.

Conclusion

The SST39VF1601C-70-4C-B3KE is a low-power, high-density static random access memory (SRAM) device that is optimized for industrial, automotive, and telecommunication applications. It is composed of a matrix of transistors, with each transistor capable of storing two data bits. Data bits are stored by turning the transistor ‘ON’ or ‘OFF’ depending on the state of the data. This makes the SRAM device an ideal choice for cost-sensitive projects which still require high-quality performance.

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