Allicdata Part #: | SST39VF010-70-4C-NHE-ND |
Manufacturer Part#: |
SST39VF010-70-4C-NHE |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 1M PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 1Mb (128K x 8) Parallel 70ns 32-P... |
DataSheet: | SST39VF010-70-4C-NHE Datasheet/PDF |
Quantity: | 823 |
Series: | SST39 MPF™ |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 20µs |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | SST39VF010 |
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Memory is an integral part of any computing device and it is critical to its functioning. The SST39VF010-70-4C-NHE is one such example of a popular memory device. It\'s a 4-megabit (32Mb) Flash memory IC that is frequently used to store data. Here, we will take a look at the application field and working principle of this reliable memory device.
Application Field:
The SST39VF010-70-4C-NHE is used widely in the embedded system industry. It is designed to be used in rugged and harsh environments and can operate at temperatures of up to 125°C. Since it is an asynchronous device, it is also used in low-voltage applications.
It can be used in a variety of applications, including automotive, medical, industrial, telecommunications, and consumer/hobby products. Some of the potential applications it can be used in include medical diagnostic equipment, automotive electronics, telecommunications systems, industrial controllers, and automotive wireless sensor nodes.
Working Principle:
The SST39VF010-70-4C-NHE is divided into four memory banks or cells. Each bank has an array of 8,192 words, each word being 32 bits in size. Each word can be written up to two times without the need for any additional code.
The device operates using a Page Write Mode. This means that 32 bytes/words are written to the memory in one go, using the programming pulse. When writing data, only the written words in a single page memory bank can be programmed. The other words are kept as they are.
The device supports three reading speeds: Fast Read, Standard Read, and Burst Read. In the Fast Read mode, a single word is read in a single clock cycle. In Standard Read mode, up to four sequential words are read in four clock cycles. And in the Burst Read mode, four words are read in a single clock cycle.
The SST 39VF010-70-4C-NHE supports four programming modes—Page Write, Byte Program, Block Erase, and Global Erase. Page write mode programs one page of 256 bytes of data at a time. In Byte program mode, data is written byte by byte. The Block Erase mode may be used to erase any 64k block of memory. Lastly, the Global Erase command erases all memory.
The device has an eight-bit instruction code for controlling the data flow. This instruction code is also used for executing more advanced operations, such as verifying data, protecting memory, and setting up various parameters.
The SST 39VF010-70-4C-NHE is mostly used for storing and managing data. It is designed for applications requiring a high degree of reliability, performance, and quality. It is a reliable memory device that can meet various needs of users.
The specific data is subject to PDF, and the above content is for reference
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